X-On Electronics has gained recognition as a prominent supplier of MMBT3906_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3906_R1_00001 Panjit

MMBT3906_R1_00001 electronic component of Panjit
MMBT3906_R1_00001 Panjit
MMBT3906_R1_00001 Bipolar Transistors - BJT
MMBT3906_R1_00001  Semiconductors

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Part No. MMBT3906_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /S2A/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TP/GPT03-QI14/PJ///
Datasheet: MMBT3906_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1375 ea
Line Total: USD 0.14 
Availability - 10320
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10320
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.1375
10 : USD 0.0825
100 : USD 0.0512
500 : USD 0.036
1000 : USD 0.0265
3000 : USD 0.0231
6000 : USD 0.0209
9000 : USD 0.0176
24000 : USD 0.0165

   
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We are delighted to provide the MMBT3906_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) 0.047(1.20) Green molding compound as per IEC 61249 standard 0.079(2.00) 0.008(0.20) 0.003(0.08) 0.070(1.80) MECHANICAL DATA 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Case: SOT-23, Plastic 0.020(0.50) Terminals: Solderable per MIL-STD-750, Method 2026 0.013(0.35) Approx. Weight: 0.0003 ounces, 0.0084 grams 3 Top View Marking: S2A COLLECTOR 3 Collector 1 BASE 1 2 2 Base Emitter EMITTER ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO -40 V Collector - Base Voltage VCBO -40 V Emitter - Base Voltage VEBO -5 V Collector Current - Continuous I C -200 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 330 mW O Thermal Resistance , Junction to Ambient RJA 375 C/W O Operating Junction Temperature and Storage Temperature Range TJ,TSTG -55 to 150 C Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. March 8,2021 MMBT3906-REV.03 PAGE . 1 0.006(0.15)MIN.MMBT3906 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown V(BR)CEO IC=-1mA, IB=0 -40 - - V Voltage Collector - Base Breakdown V(BR)CBO IC=-10uA, IE=0 -40 - - V Voltage Emitter - Base Breakdown Voltage V(BR)EBO IE=-10uA, IC=0 -5 - - V Base Cutoff Current I BL VCE=-30V, VEB=-3V - - -50 nA CEX VCE=-30V, VEB=-3V - - -50 nA Collector Cutoff Current I IC=-0.1mA, VCE=-1V 60 - - IC=-1mA, VCE=-1V 80 - - DC Current Gain (Note 2) h IC=-10mA, VCE=-1V 100 - 300 - FE IC=-50mA, VCE=-1V 60 - - IC=-100mA, VCE=-1V 30 - - Collector - Emitter Saturation IC=-10mA, IB=-1mA -0.25 VCE(SAT) -- V Voltage (Note 2) IC=-50mA, IB=-5mA -0.4 Base - Emitter Saturation Voltage IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(SAT) V (Note 2) IC=-50mA, IB=-5mA - - -0.95 Collector - Base Capacitance CCBO VCB=-5V, IE=0, f=1MHz - - 4.5 pF Emitter - Base Capacitance CEBO VEB=-0.5V, IC=0, f=1MHz - - 10 pF VCC=-3V,VBE=-0.5V, Delay Time td -- 35 ns I C=-10mA,I B=-1mA VCC=-3V,VBE=-0.5V, Rise Time tr -- 35 ns I C=-10mA,I B=-1mA VCC=-3V,IC=-10mA Storage Time ts - - 225 ns IB1=IB2=-1mA VCC=-3V,IC=-10mA Fall Time tf -- 75 ns IB1=IB2=-1mA I C=-10mA,VCE=-20V, Current Gain-Bandwidth Product f 250 - - MHz T f=100MHz Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V 275 <1ns -0.5V 0 C *<4pF 10K S -10.9V 300ns Delay and Rise Time Equivalent Test Circuit +3V 275 < 1ns +9.1V 00 C *<4pF 10K S -10.9V 10 to 500us 1N916 Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit March 8,2021 MMBT3906-REV.03 PAGE . 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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