MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) 0.047(1.20) Green molding compound as per IEC 61249 standard 0.079(2.00) 0.008(0.20) 0.003(0.08) 0.070(1.80) MECHANICAL DATA 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Case: SOT-23, Plastic 0.020(0.50) Terminals: Solderable per MIL-STD-750, Method 2026 0.013(0.35) Approx. Weight: 0.0003 ounces, 0.0084 grams 3 Top View Marking: S2A COLLECTOR 3 Collector 1 BASE 1 2 2 Base Emitter EMITTER ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO -40 V Collector - Base Voltage VCBO -40 V Emitter - Base Voltage VEBO -5 V Collector Current - Continuous I C -200 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 330 mW O Thermal Resistance , Junction to Ambient RJA 375 C/W O Operating Junction Temperature and Storage Temperature Range TJ,TSTG -55 to 150 C Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. March 8,2021 MMBT3906-REV.03 PAGE . 1 0.006(0.15)MIN.MMBT3906 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown V(BR)CEO IC=-1mA, IB=0 -40 - - V Voltage Collector - Base Breakdown V(BR)CBO IC=-10uA, IE=0 -40 - - V Voltage Emitter - Base Breakdown Voltage V(BR)EBO IE=-10uA, IC=0 -5 - - V Base Cutoff Current I BL VCE=-30V, VEB=-3V - - -50 nA CEX VCE=-30V, VEB=-3V - - -50 nA Collector Cutoff Current I IC=-0.1mA, VCE=-1V 60 - - IC=-1mA, VCE=-1V 80 - - DC Current Gain (Note 2) h IC=-10mA, VCE=-1V 100 - 300 - FE IC=-50mA, VCE=-1V 60 - - IC=-100mA, VCE=-1V 30 - - Collector - Emitter Saturation IC=-10mA, IB=-1mA -0.25 VCE(SAT) -- V Voltage (Note 2) IC=-50mA, IB=-5mA -0.4 Base - Emitter Saturation Voltage IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(SAT) V (Note 2) IC=-50mA, IB=-5mA - - -0.95 Collector - Base Capacitance CCBO VCB=-5V, IE=0, f=1MHz - - 4.5 pF Emitter - Base Capacitance CEBO VEB=-0.5V, IC=0, f=1MHz - - 10 pF VCC=-3V,VBE=-0.5V, Delay Time td -- 35 ns I C=-10mA,I B=-1mA VCC=-3V,VBE=-0.5V, Rise Time tr -- 35 ns I C=-10mA,I B=-1mA VCC=-3V,IC=-10mA Storage Time ts - - 225 ns IB1=IB2=-1mA VCC=-3V,IC=-10mA Fall Time tf -- 75 ns IB1=IB2=-1mA I C=-10mA,VCE=-20V, Current Gain-Bandwidth Product f 250 - - MHz T f=100MHz Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V 275 <1ns -0.5V 0 C *<4pF 10K S -10.9V 300ns Delay and Rise Time Equivalent Test Circuit +3V 275 < 1ns +9.1V 00 C *<4pF 10K S -10.9V 10 to 500us 1N916 Duty Cycle ~ 2.0% Storage and Fall Time Equivalent Test Circuit March 8,2021 MMBT3906-REV.03 PAGE . 2