Product Information

MMBTA44_R1_00001

MMBTA44_R1_00001 electronic component of Panjit

Datasheet
Bipolar Transistors - BJT /A44/TR/7"/HF/3K/SOT-23/TRA/SOT/HVT-03TN/HVT03-QI02/PJ///

Manufacturer: Panjit
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2657 ea
Line Total: USD 0.27

21543 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15349 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.1709
10 : USD 0.1151
100 : USD 0.0605
1000 : USD 0.0332
3000 : USD 0.0285
9000 : USD 0.0226
24000 : USD 0.0214
45000 : USD 0.0214
99000 : USD 0.019

     
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MMBTA44 NPN HIGH VOLTAGE TRANSISTOR 400 Volt POWER 225 mWatt VOLTAGE FEATURES 0.120(3.04) Silicon, planar design 0.110(2.80) Collector-emitter voltage V = 400V CE Collector current I = 300mA C Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) Green molding compound as per IEC61249 Std 0.047(1.20) (Halogen Free) 0.079(2.00) 0.008(0.20) 0.003(0.08) 0.070(1.80) MECHANICAL DATA Case: SOT-23, Plastic 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Terminals: Solderable per MIL-STD-750, Method 2026 0.020(0.50) Approx. Weight: 0.0003 ounces, 0.008 grams 0.013(0.35) Marking: A44 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector - Emitter Voltage V 400 V CEO Collector - Base Voltage V 500 V CBO Emitter - Base Voltage V 6.0 V EBO Collector Current Continuous I 300 mA C THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) P 225 mW TOT O Thermal Resistance ,Junction to Ambient R 556 C/W JA O Junction Temperature T -55 to 150 C J O Storage Temperature T -55 to 150 C STG 3 Top View COLLECTOR 3 Collector 1 BASE Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. 1 2 2 Base Emitter EMITTER September 2,2014-REV.07 PAGE . 1 0.006(0.15)MIN.MMBTA44 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown Voltage V CEO I =1mA,I =0 400 - - V (BR) C B Collector - Base Breakdown Voltage V CBO I =100A,I =0 500 - - V (BR) C E Emitter - Base Breakdown Voltage V EBO I =10A,I =0 6 - - V (BR) E C Collector Cut-off Current I V =400V,I =0A - - 0.1 A CBO CB E Emitter Cut-off Current I V =6V,I =0 - - 0.1 A EBO EB C V =10V,I =1mA 40 - - CE C V =10V,I =10mA 50 - 200 CE C DC Current Gain h - FE V =10V,I =50mA 45 - - CE C V =10V,I =100mA 40 - - CE C I =1mA,I =0.1mA 0.4 C B Collector - Emitter Saturation Voltage V I =10mA,I =1mA -- 0.5 V CE(SAT) C B I =50mA,I =5mA 0.75 C B Base - Emitter Satruation Voltage V I =10mA,I =1mA - - 0.75 V BE(SAT) C B I =10mA,V =20V C CE , Collector Gain - Bandwidth Product F 50 - - MH T Z f=100MH Z September 2,2014-REV.07 PAGE . 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
PANJIT
PANJIT International
Panjit International Inc.
Panjit Touch Screens

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