X-On Electronics has gained recognition as a prominent supplier of MMBTA92_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA92_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA92_R1_00001 Panjit

MMBTA92_R1_00001 electronic component of Panjit
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Part No.MMBTA92_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /A92/TR/7"/HF/3K/SOT-23/TRA/SOT/HVT-03TP/HVT03-QI03/PJ///
Datasheet: MMBTA92_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1023 ea
Line Total: USD 0.1 
Availability - 4782
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4782
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1023
10 : USD 0.0682
100 : USD 0.0352
1000 : USD 0.0308
3000 : USD 0.0297
9000 : USD 0.0209
24000 : USD 0.0198
45000 : USD 0.0187
99000 : USD 0.0176

2871
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.182
10 : USD 0.1274
100 : USD 0.0854
250 : USD 0.0518
470 : USD 0.0364

   
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We are delighted to provide the MMBTA92_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA92_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBTA92 PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWatt FEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A92 ABSOLUTE RATINGS PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Collector-base voltage open emitter VCBO -300 - V Collector-emitter voltage open base VCEO -300 - V Emitter-base voltage open collector VEBO -5 - V Collector current (DC) I C - -500 mA Peak collector current I CM - -600 mA Peak base current I BM - -100 mA o Total power dissipation TAMB<25 C note1 PTOT - 250 mW o Storage temperature TSTG -55 +150 C o Junction temperature TJ -55 +150 C o C Operating ambient temperature TAMB -55 +150 Note 1: Mounted on FR4 PCB at 1 inch square copper pad. November 10,2017-REV.06 PAGE . 1MMBTA92 T HER M A L C HA R A C TE R I ST I C S P A R A M E TE R C O ND I T I O NS S Y M B O L V A L UE UNI T T yp i c al T h er m a l r e si s t a n c e f r om j un c t i o n t o o n o t e 1 R J A 500 C / W am bi e n t Not e 1: Mo u n te d on FR 4 PC B at 1 i nc h s q ua r e c o p pe r pa d. C HAR A C T E R I S T I C S o T AM B = 2 5 C unl e s s o t he r w i s e s p e c i f i e d PA R A M E T E R C O N D I T I O N S S Y M B O L M I N . M A X . U NI T Collector-emitter breakdown voltage I C =-1mA I B=0 V(BR)CEO -300 - V Collector-base breakdown voltage I C =-100uA I =0 V -300 - V E (BR)CBO Emitter-base breakdown voltage I E=-100uA I C=0 V(BR)EBO -5 - V C o l l e c t o r c u t - o f f c u r r e nt I E = 0 V C B = - 2 0 0 V I C B O - - 2 5 0 nA C o l l e c t o r-emitter c u t - o f f c u r r e nt V CES = - 30 0 V I C ES - - 2 5 0 nA E m i t t e r c ut - o f f c ur r e nt I C = 0 V E B = - 3 V I E B O - - 1 0 0 nA V C E = - 1 0 V n o t e 2 I C = - 1 m A 2 5 - D C c u r r e nt g a i n h F E - I C = - 1 0 m A 4 0 - I C = - 3 0 m A 2 5 - C o l l e c t o r - e m i t t e r s a t ur a t i o n v o l t a g e I C = - 2 0 m A I B = - 2 m A V C E ( S A T ) - - 5 0 0 m V B a s e - e m i t t e r s a t ur a t i o n vo l t a g e I C = - 2 0 m A I B = - 2 m A V BE ( S A T ) - - 9 0 0 m V I E = 0 V C B = - 2 0 V C o l l e c t o r c a p a c i t a n c e C C - 6 p F f = 1 M H z I C = - 1 0 m A V C E = - 2 0 V T r a n s i t i o n f r e q u e nc y f T 5 0 - M H z f = 10 0 M H z No t e 2 : P u l s e t e s t : t p < 30 0 s < 0 . 0 2 November 10,2017-REV.06 PAGE . 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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