X-On Electronics has gained recognition as a prominent supplier of PDK6912 MOSFET across the USA, India, Europe, Australia, and various other global locations. PDK6912 MOSFET are a product manufactured by Potens. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PDK6912 Potens

PDK6912 electronic component of Potens
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See Product Specifications
Part No.PDK6912
Manufacturer: Potens
Category: MOSFET
Description: MOSFET N Trench 60V 5A (Tc) 2.5V @ 250uA 75 mΩ @ 5A,10V SOT-89 RoHS
Datasheet: PDK6912 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
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Drain Source Voltage Vdss
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Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PDK6912 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDK6912 and other electronic components in the MOSFET category and beyond.

Image Part-Description
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MOSFET P Trench 60V 2A (Tc) 2.5V @ 250uA 190 mΩ @ 2A,10V SOT-23-3S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 30V 5.3A (Tc) 900mV @ 250uA 32 mΩ @ 4A,4.5V SOT-23-3S RoHS
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MOSFET P Trench 20V 4.7A (Tc) 800mV @ 250uA 50 mΩ @ 3A,4.5V SOT-23-3S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET P Trench 20V 4.1A (Tc) 800mV @ 250uA 65 mO @ 3A,4.5V SOT-23-3S RoHS
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MOSFET N Trench 30V 176A (Tc) 2.5V @ 250uA 3 mΩ @ 30A,10V TO-220 RoHS
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MOSFET P Trench 100V 35A (Tc) 2.5V @ 250uA 45 mΩ @ 15A,10V TO-220 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 100V 150A (Tc) 2.5V @ 250uA 4.2 mΩ @ 20A,10V TO-220 RoHS
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MOSFET N Trench 30V 6.5A 2.5V @ 250uA 34 mΩ @ 4A,4.5V SOT-23-3S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 20V 6.7A 800mV @ 250uA 24 mΩ @ 3A,2.5V SOT-23-3S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET P Trench 30V 5.1A 2.2V @ 250uA 46 mΩ @ 2A,4.5V SOT-23-4S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image PDN2311S
MOSFET P Trench 20V 4.7A (Tc) 800mV @ 250uA 50 mΩ @ 3A,4.5V SOT-23-3S RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 100V 15A (Tc) 2.5V @ 250uA 90 mΩ @ 5A,10V TO-252 RoHS
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MOSFET P Trench 40V 6.5A (Tc) 2.5V @ 250uA 45 mΩ @ 6A,10V SOP-8 RoHS
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MOSFET N Trench 200V 18A (Tc) 4V @ 250uA 150 mΩ @ 9A,10V TO-220-3L RoHS
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MOSFET N Trench 900V 9A (Tc) 4.5V @ 250uA 1.28 Ω @ 4.5A,10V TO-3P RoHS
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MOSFET N Trench 600V 30mA (Tc) 1V @ 8uA 700 Ω @ 3mA,0V SOT23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET N Trench 100V 33A (Tc) 4V @ 250uA 44 mΩ @ 16A,10V TO-220-3L RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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MOSFET P Trench 40V 15A 2.4V @ 250uA 17 mΩ @ 15A,10V TO-252-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

kyThe PDK6912 with MOSFET N Trench is an electronic part manufactured by Potensky that is ideal for use in high-current switching applications. It is a power MOSFET (transistor) that features high-speed, low-capacitive switching, and low-reverse transfer characteristics. This transistor has a drain-source breakdown voltage of 60V, a continuous drain current of 5A, a trigger voltage of 2.5V @ 250uA, a resistance of 75 mO @ 5A, and a drain source voltage of 10V, and it comes in a SOT-89 RoHS package. The PDK6912 with MOSFET N Trench is designed to meet all the requirements of UL and CSA safety standards. It is renowned for its high efficiency and reliability and is suitable for a variety of electronic applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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