CM100DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 100 Amperes/1200 Volts T MEASUREMENT POINT C A N D M K K F E C2E1 E2 C1 S B H G F R P - NUTS (3 TYP) U J Q - (2 TYP) Description: Powerex IGBT Modules are designed for use in high frequency applications 30 kHz W W W W for hard switching applications V X V and 60 to 70 kHz for soft switching T applications. Each module consists of two IGBT Transistors C L LABEL in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from G2 the heat sinking baseplate, offering E2 simplified system assembly and C2E1 thermal management. E2 C1 Features: E1 Low E G1 SW(off) Discrete Super-Fast Recovery Outline Drawing and Circuit Diagram Free-Wheel Diode Isolated Baseplate for Easy Dimensions Inches Millimeters Dimensions Inches Millimeters Heat Sinking A 3.70 94.0 M 0.67 17.0 B 1.89 48.0 N 0.28 7.0 Applications: C 1.18+0.04/-0.01 30.0+1.0/-0.5 P M5 Metric M5 Power Supplies D 3.150.01 80.00.25 Q 0.26 Dia. Dia. 6.5 Induction Heating E 0.43 11.0 R 0.02 4.0 Welders F 0.16 4.0 S 0.94 24.0 Ordering Information: G 0.71 18.0 T 0.3 7.5 Example: Select the complete H 0.51 13.0 U 0.47 12.0 part module number you desire J 0.53 13.5 V 0.63 16.0 from the table below -i.e. K 0.91 23.0 W 0.1 2.5 CM100DU-24NFH is a 1200V L 0.83 21.2 X 0.98 25.0 (V ), 100 Ampere Dual CES IGBT Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 100 24 09/14 Rev. 2 1 G1E1 E2G2Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM100DU-24NFH Dual IGBT NFH-Series Module 100 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM100DU-24NF Units Collector-Emitter Voltage (G-E Short) V 1200 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES *2 Collector Current (Operation) I 100 Amperes C *2 Peak Collector Current (Pulse) I 200 Amperes CM *2 *1 Emitter Current (Operation) I 100 Amperes E *2 *1 Peak Emitter Current (Pulse) I 200 Amperes EM *3 Maximum Collector Dissipation (T = 25C) P 560 Watts C C *7 *3 Maximum Collector Dissipation (T = 25C) P 730 Watts C C Junction Temperature T 40 ~ +150 C j Storage Temperature T 40 ~ +125 C stg Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 Minute) V 2500 Volts ISO Mounting Torque, M5 Main Terminal 30 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate-Emitter Threshold Voltage V I = 10mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Collector-Emitter Saturation Voltage V I = 100A, V = 15V, T = 25C 5.0 6.5 Volts CE(sat) C GE j I = 100A, V = 15V, T = 125C 5.0 Volts C GE j Input Capacitance C 16 nf ies Output Capacitance C V = 10V, V = 0V 1.3 nf oes CE GE Reverse Transfer Capacitance C 0.3 nf res Total Gate Charge Q V = 600V, I = 100A, V = 15V 450 nC G CC C GE Turn-on Delay Time t 100 ns d(on) Turn-on Rise Time t V = 600V, I = 100A, 50 ns r CC C Turn-off Delay Time t V = 15V, R = 3.1, 250 ns d(off) GE G Turn-off Fall Time t Inductive Load, 150 ns f *1 Diode Reverse Recovery Time t I = 100A 150 ns rr E *1 Diode Reverse Recovery Charge Q 5.0 C rr *1 Emitter-Collector Voltage V I = 100A, V = 0V 3.5 Volts EC E GE *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) *3 Junction temperature (T ) should not increase beyond maximum junction temperature (T ) rating. j j(max) *7 Case temperature (T ) measured point is just under the chips. C 2 09/14 Rev. 2