Product Information

PE42721MLBA-Z

PE42721MLBA-Z electronic component of pSemi

Datasheet
RF Switch SPDT 5MHz to 2.2GHz 53dB 12-Pin QFN EP T/R

Manufacturer: pSemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7273 ea
Line Total: USD 0.73

3168 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2582 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7049
100 : USD 0.7026
1000 : USD 0.6521
3000 : USD 0.6428
6000 : USD 0.6428
12000 : USD 0.6313
24000 : USD 0.6302

     
Manufacturer
Product Category
RoHS - XON
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Product Specification PE42721 UltraCMOS SPDT RF Switch 5 2200 MHz Product Description Features The PE42721 is a HaRP technology-enhanced absorptive 75 SPDT RF switch developed on the HaRP technology enhanced UltraCMOS process technology. High linearity CTB of -99 dBc PE42721 is a highly linear device delivering high CSO better than -105 dBc isolation and very low insertion loss performance. It is Supports +1.8V control logic designed for broadband applications such as TV tuner modules, CATV signal switching and Low insertion loss distribution, DTV, multi-tuner digital video recorders 0.40 dB 220 MHz (DVRs) and set-top boxes. 0.50 dB 870 MHz 0.65 dB 2200 MHz PE42721 supports +1.8V control logic and offers high ESD protection. PE42721 is pin compatible to High isolation PE42750. In addition, no blocking capacitors are 85 dB 220 MHz required if DC voltage is not present on the RF ports. 68 dB 870 MHz 53 dB 2200 MHz Peregrines HaRP technology enhancement is an innovative feature of the UltraCMOS process, ESD performance offering the performance of GaAs with the economy 3kV HBM on RF pins to GND and integration of conventional CMOS. 2kV HBM on all other pins 1kV CDM on all pins Figure 1. Functional Diagram Figure 2. Package Type RFC 12-lead 3x3 mm QFN RF1 RF2 ESD ESD 75 75 CMOS Control Driver and ESD DOC-78344 CTRL1 CTRL2 Document No. DOC-13814-4 www.psemi.com 2013-2016 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 12 ESDPE42721 Product Specification Table 1. Electrical Specifications Temp = +25C, V = 3.3V (Z = Z = 75) DD S L Parameter Path Condition Min Typ Max Unit Operational frequency 5 2200 MHz 5220 MHz 0.40 0.55 dB Insertion loss RFCRFX 221870 MHz 0.50 0.70 dB 8712200 MHz 0.65 0.85 dB 5220 MHz 81 85 dB Isolation RFXRFX 221870 MHz 65 68 dB 8712200 MHz 52 53 dB 5220 MHz 68 70 dB Isolation RFCRFX 221870 MHz 57 59 dB 8712200 MHz 53 55 dB 870 MHz 18 dB Return loss All ports 2200 MHz 15 dB 1,2 Input 0.1 dB compression RFCRFX 451000 MHz 27 dBm 3 IIP2 RFX 452200 MHz 110 dBm IIP3 RFX 52200 MHz 60 dBm CTB 159 channels 42 dBmV per channel output power -99 dBc CSO 159 channels 42 dBmV per channel output power < -105 dBc Cross modulation distortion 159 channels 42 dBmV per channel output power -89.5 dBc Video feedthrough DC measurement 4 mV PP Switching time 50% CTRL to 90% or 10% RF 1 1.5 s Notes: 1. The input 0.1 dB compression point (P0.1dB) is a linearity figure of merit. Refer to Table 3 for the RF input power PIN 2. P0.1dB = 25 dBm 2.2 GHz 3. IIP2 = 83 dBm 5 MHz 2013-2016 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-13814-4 UltraCMOS RFIC Solutions Page 2 of 12

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Peregrine
PEREGRINE SEMICONDUCTOR

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