PE42723 Document Category: Product Specification UltraCMOS SPDT RF Switch, 51794 MHz Features Figure 1 PE42723 Functional Diagram Supports DOCSIS 3.0/1 requirements Exceptional harmonics RFC 2fo of 121 dBc 17 MHz 3fo of 140 dBc 17 MHz Best in class linearity across frequency band RF1 RF2 Low insertion loss and high isolation performance Insertion loss of 0.3 dB 1218 MHz Isolation of 54 dB 204 MHz High ESD performance of 3 kV HBM CMOS Control Driver Packaging 12-lead 3 3 0.75 mm QFN V1 Applications Broadband market (DOCSIS 3.0/1) Cable modem Set-top box Residential gateway Filter bank switching Relay replacement between DOCSIS 3.0 and DOCSIS 3.1 configurations Product Description The PE42723 is a HaRP technology-enhanced reflective SPDT RF switch designed for use in cable applica- tions including DOCSIS 3.0/1 cable modem, set-top box and residential gateway. It delivers high linearity and excellent harmonics performance in the 51794 MHz band. It also features low insertion loss and high isolation performance making the PE42723 ideal for DOCSIS 3.1 applications. The PE42723 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. 20152016, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-64524-5 (01/2016) www.psemi.comPE42723 SPDT RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42723 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage, V1 0.3 3.6 V RF input power, 75 86 dBmV Storage temperature range 65 +150 C (1) 3000 V ESD voltage HBM , all pins (2) 500 V ESD voltage CDM , all pins Notes: 1) Human body model (MIL-STD 883 Method 3015). 2) Charged device model (JEDEC JESD22-C101). Page 2 DOC-64524-5 (01/2016) www.psemi.com