PE42821MLBA pSemi

Product Specification PE42821 UltraCMOS SPDT RF Switch 100 - 2700 MHz Product Description Features The PE42821 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in High power handling mobile radio, relay replacement and other high 45 dBm 850 MHz, 32W performance wireless applications. 44 dBm 2 GHz, 25W High linearity This switch is a pin-compatible faster switching version of 82 dBm IIP3 850 MHz the PE42820. It maintains high linearity and power 76 dBm IIP3 2.7 GHz handling from 100 MHz through 2.7 GHz. PE42821 also Low insertion loss features low insertion loss and is offered in a 32-lead 0.35 dB 850 MHz 5x5 mm QFN package. In addition, no external blocking 0.60 dB 2 GHz capacitors are required if 0V DC is present on the RF Fast switching time of 4 s ports. (bypass mode) Wide supply range of 2.3V to 5.5V The PE42821 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on- +1.8V control logic compatible insulator (SOI) technology on a sapphire substrate. ESD performance 1.5kV HBM on all pins Peregrines HaRP technology enhancements deliver External negative supply option high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 2. Package Type 32-lead 5x5 mm QFN Figure 1. Functional Diagram DOC-52312 Document No. DOC-13714-3 www.psemi.com 2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 12 Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: PE42821 Product Specification Table 1. Electrical Specifications 25C (Z = Z = 50 ) unless otherwise noted S L 1 2 Normal mode : V = 3.3V, Vss = 0V or Bypass mode : V = 3.3V, Vss = -3.3V DD EXT DD EXT Parameter Path Condition Min Typ Max Unit 100 MHz 1 GHz 0.40 0.55 dB 3 0.60 0.80 dB Insertion loss RFCRFX 1 GHz 2 GHz 0.80 1.05 dB 2 GHz 2.7 GHz 33 35 dB 100 MHz 1 GHz Isolation RFXRFX 1 GHz 2 GHz 26 28 dB 2 GHz 2.7 GHz 22 24 dB Unbiased isolation RFCRFX V , V1 = 0V, +27 dBm 6 dB DD 20 dB 100 MHz 1 GHz 3 13 dB Return loss RFX 1 GHz 2 GHz 14 dB 2 GHz 2.7 GHz -82 -78 dBc 2fo: +45 dBm pulsed 1GHz, 50 Harmonics RFCRFX 3fo: +45 dBm pulsed 1GHz, 50 -85 -81 dBc 82 dBm 850 MHz Input IP3 RFCRFX 2700 MHz 76 dBm 100 MHz 2 GHz 45.5 dBm 4 Input 0.1 dB compression point RFC-RFX 2 GHz 2.7 GHz 44.5 dBm 1 Switching time in normal mode 50% CTRL to 90% or 10% RF 7 11 s 2 50% CTRL to 90% or 10% RF 4 s Switching time in bypass mode 5 Settling time 50% CTRL to harmonics within specifications 15 25 s Notes: 1. Normal mode: single external positive supply used 2. Bypass mode: both external positive supply and external negative supply used 3. Performance specified with external matching. Refer to Evaluation Kit section for additional information 4. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the operating RF input power (50 ) 5. See harmonics specs above 2012-2013 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-13714-3 UltraCMOS RFIC Solutions Page 2 of 12 Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: