QPM1000 220GHz Limiter/Low-Noise Amplifier Product Description The Qorvo QPM1000 is an integrated limiter/LNA providing robust, high performance over the 220GHz frequency range. The QPM1000 delivers 17 dB small signal gain with gain control and > 18 dBm P1dB with a range of noise figure of 1.5 4 dB across frequency. In addition, the integrated limiter provides a robustness level of up to 4 W of incident power without performance degradation. The QPM1000 is packaged in an air cavity, laminate- based 6 x 5 mm QFN for easy handling. With a small form factor coupled with both ports matched to 50 ohms, the QPM1000 is ideally suited to support both commercial and Product Features defense related applications where robust receiver front ends are required. Frequency Range: 220 GHz Input Power CW Survivability: 4 W Gain: > 17 dB Adjustable gain (> 30 dB using VG2) Noise Figure: < 2.0 dB (3-12 GHz) Noise Figure: < 4.0 dB (outer frequencies) IM3: < 21 dBc (P 0 dBm) IN Functional Block Diagram Bias: VD = 5 V, ID = 100 mA, VG1 = -0.6 V typical, V = +1.3 V G2 18 17 16 15 14 13 Package dimensions: 6.00 x 5.00 x 1.72 mm RF 12 Output RF 11 1 Input 10 2 3 19 4 5 6 7 8 9 Ordering Information Part No. Description Applications QPM1000 220GHz Limiter/LNA, Waffle Pack, Qty 25 Receiver Front End Building Block QPM1000TR7 Tape and Reel 7 , Qty 750 QPM1000EVB01 QPM1000 Evaluation Board, Qty 1 - 1 of 11 - Data Sheet Rev I, May 2020 Subject to change without notice www.qorvo.com QPM1000 220GHz Limiter/Low-Noise Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 7V Drain Voltage (VD) 5 V Gate Voltage Range (VG1) 2 to 0V Drain Current (IDQ) 100mA 1 Gate Voltage Range (V ) 2 to +3V Gate Voltage (V ) , typical -0.6 V G2 G1 Drain Current (ID) 144 mA Gate Voltage (VG2) +1.3 V Gate Current Range (I ) -24 to +24 mA G1 Operating Temperature Range 40 to 85C Gate Current Range (IG2) -24 to +24 mA (T ) BASE RF Input Power, CW, 50 , 25 C 36 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all RF Input Power, CW, 50 , 85 C 33dBm recommended operating conditions. 1 Incident Power, Pulsed , 50 , 85 C 40dBm Channel Temperature (T ) 200C CH Note: Mounting Temperature (30 Seconds) 260C 1 Adjust V to achieve the required I G1 DQ. Storage Temperature 55 to 150C Note: 1 Pulse conditions: PW = 100 us, Duty Cycle = 10% Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 20 GHz Small Signal Gain > 17 dB Input Return Loss > 9.7 dB Output Return Loss > 7.6 dB Noise Figure: 2 GHz 2.8 dB Noise Figure: 8 GHz 1.7 dB Noise Figure: 14 GHz 2.3 dB Noise Figure: 20 GHz 4.0 dB Third-Order Intermodulation Distortion < 21 dBc (P 0 dBm / Tone, 10 MHz Tone Spacing) IN Output Power (Saturation P = 10 dBm) > 21 dBm IN Output Power (1 dB Compression) > 17 dBm Small Signal Gain Temperature Coefficient -0.010 dB/C Noise Figure Temperature Coefficient 0.010 dB/C Output Power Temperature Coefficient 0.004 dBm/C Test conditions unless otherwise noted: 25C, VD = +5V, IDQ = 100mA, VG1 = 0.6V Typical, VG2 = 1.3V - 2 of 11 - Data Sheet Rev I, May 2020 Subject to change without notice www.qorvo.com