RFSA4013 Temperature Compensating Attenuator RFSA4013 TEMPERATURE COMPENSATING ATTENUATOR Package: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 GND 1 12 GND Features CONTROL Patent Pending Circuit BLOCK Architecture NC 2 11 NC Broadband 50MHz to 6000MHz Frequency Range RFIN 3 10 RFOUT 3 Selectable Attenuation versus ATTEN Temperature Slopes NC 4 9 NC +55dBm IIP3 Typical +85dBm IIP2 Typical 5 6 7 8 High 1dB Compression Point >+30dBm Low Supply Current 1mA Typical Functional Block Diagram 5V Power Supply Class 1C ESD (1000V) Product Description Complete Solution in a Small RFMD s RFSA4013 is a fully monolithic analog temperature compensating attenuator (TCA) fea- 3mm x 3mm QFN Package turing exceptional linearity over its entire gain control range. It is designed to offset the gain reduction of an RF component over temperature without the need for closed loop feedback. 3.3V Part Available - RFSA4023 Three customer selectable temperature coefficients make it a flexible solution for RF lineups. It incorporates revolutionary new circuit architecture to solve a long standing industry problem with regards to attenuator architecture: high IP3, low DC current and broad bandwidth. Tradi- Applications tional approaches for solving this problem require expensive co-fired ceramics with tempera- Cellular, 3G Infrastructure ture sensitive materials or current hungry PIN diodes with elaborate area consuming control circuits. This temperature compensating attenuator requires only a single supply voltage and WiBro, WiMax, LTE two logic bits to set control attenuation slope versus temperature. The RFSA4013 draws a very low 1mA current and is packaged in a small 3mm x 3mm QFN. This attenuator is matched to Microwave Radio 50 over its rated control range and frequency with no external matching components required. High-Linearity Level Control Ordering Information RFSA4013SQ Sample bag with 25 pieces RFSA4013SR 7 Sample reel with 100 pieces RFSA4013TR7 7 Reel with 2500 pieces RFSA4013PCK-410 50MHz to 6000MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111221 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 16 GND GND MODE1 VDD MODE2 GND GND GNDRFSA4013 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage (V ) -0.5 to +6.0 V DD Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Mode Pin Voltage (MODE 1) -0.5 to +6.0 V tions is not implied. Mode Pin Voltage (MODE 2) -0.5 to +6.0 V The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any RF Input Power +30 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temperature -40 to +85 C cation circuitry and specifications at any time without prior notice. Storage Temperature -65 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free Maximum Junction Temperature +125 C per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in ESD - Human Body Model (HBM) 1000 V solder. Specification Parameter Unit Condition Min. Typ. Max. General Supply Voltage (V ) 4.75 5 5.25 V DD Supply Current 1 mA Operating Temperature -40 85 C Thermal Resistance 45 C/W RF Input Power 27 dBm RF Performance Frequency Range 50 6000 MHz Attenuation Slope Mode1 = Low 0.043 dB/C -40C to 80C Mode2 = High Attenuation Slope Mode1 = High 0.058 dB/C -40C to 80C Mode2 = High Attenuation Slope Mode1 = High 0.066 dB/C -40C to 80C Mode2 = Low Nominal +25C Attenuation 5.4 dB Mode1 = Low Mode2 = High Nominal +25C Attenuation 6.35 dB Mode1 = High Mode2 = High Nominal +25C Attenuation 7.4 dB Mode1 = High Mode2 = Low Relative Phase 3 Deg Insertion Phase at +25C temperature relative to max temperature Return Loss 20 dB Input 1dB Compression Point 30 dBm Input IP3 45 55 dBm P + (IM3 /2) IN dBC Input IP2 85 dBm P + IM2 , IM2 is F1 + F2 IN dBC Input IH2 87 dBm P + H2 , H2 is Second Harmonic IN dBC Input IH3 59 dBm P + (H3 /2), H3 is Third Harmonic IN dBC Power Supply MODE pin Logic Low +0.4 V MODE pin Logic High 1 V NOTE: Typical performance at nominal conditions unless otherwise noted: Supply voltage = 5.0V, Operating temperature = 25C, RF frequency 2GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 16 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 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