2N 4 4 0 3 TO - 92BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) Collector current * - ICM: 0.6 A Collector-base voltage * V : - 40 V (BR)CBO Operating and storage junction temperature range * O O T ,Tstg: -55 C to+150 C J MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram max. 0.022 (0.55) Dimensions in inches MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS and (millimeters) 0.098 (2.5) o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Bottom (TO-92) O MAXIMUM TATINGES ( T = 25 C unless otherwise noted) A RATINGS SYMBOL VALUE UNITS o O (1) Max. Steady State Power Dissipation TA=25 C Derate above 25 C PD 600 mW o Max. Operating Temperature Range TJ 150 C o Storage Temperature Range TSTG -55 to +150 C O ELECTRICAL CHARACTERISTICS ( T = 25 C unless otherwise noted) A CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS o Thermal Resistance Junction to Ambient R q JA - - 417 C/W Notes :1. Alumina=0.4*0.3*0.024in.99.5% alumina 2010-5 2.Fully ROHS Complian,100% Sn plating (Pb-free. min. 0.49 (12.5) 0.18 (4.6) O ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I = -1.0 mAdc, I = 0) V -40 - Vdc C B (BR)CEO Collector-Base Breakdown Voltage (I = -0.1mAdc, I = 0) V -40 - Vdc C E (BR)CBO Emitter-Base Breakdown Voltage (I = -0.1mAdc, I = 0) V -5.0 - Vdc E C (BR)EBO I uAdc Base Cutoff Current (V = -35Vdc, V = -0.4Vdc) BEV - -0.1 CE BE(off) I Collector Cutoff Current (V = -35Vdc, V = -0.4Vdc) - -0.1 uAdc CEX CE EB ON CHARACTERISTICS (1) DC Current Gain (I = -0.1mAdc, V = -1.0Vdc) 30 - C CE (I = -1.0mAdc, V = -1.0Vdc) 60 - C CE (I = -10mAdc, V = -1.0Vdc) hFE 100 - C CE - (I = -150mAdc, V = -2.0Vdc) 100 300 C CE (I = -500mAdc, V = -2.0Vdc) 20 C CE - Collector-Emitter Saturation Voltage (1) (I = -150mAdc, I = -15mAdc) - -0.4 C B V Vdc CE(sat) (I = -500mAdc, I = -50mAdc) B - -0.75 C Base-Emitter Saturation Voltage (1) (I = -150mAdc, I = -15mAdc) -0.75 -0.95 C B V Vdc BE(sat) (I = -500mAdc, I = -50mAdc) - -1.3 C B SMALL-SIGNAL CHARACTERISTICS f Current-Gain-Bandwidth Product (I = -20mAdc, V = -10Vdc, f= 100MHz) 200 - MHz T C CE C - 8.5 pF Output Capacitance (V = -10Vdc, I = 0, f= 1.0MHz) cb CB E C Input Capacitance (V = -0.5Vdc, I = 0, f= 1.0MHz) - 30 pF C eb EB h 1.5 15 kohms Input lmpedance (V = -10Vdc, I = -1.0mAdc, f= 1.0kHz) ie C CE -4 h Voltage Feedback Ratio (V = -10Vdc, I = -1.0mAdc, f= 1.0kHz) 0.1 8.0 X 10 C re CE h - Small-Signal Current Gain (V = -10Vdc, I = -1.0mAdc, f= 1.0kHz) 60 500 fe CE C h umhos 1.0 Output Admittance (V = -10Vdc, I = -1.0mAdc, f= 1.0kHz) oe 100 CE C SWITCHING CHARACTERISTICS Delay Time t - 15 d (V = -30Vdc, V = -2.0Vdc, I = -150mAdc, I = -15mAdc) ns CC EB C B1 Rise Time t - 20 r Storage Time t - 225 s (V = -30Vdc, I = -150mAdc, I = I = -15mAdc) CC C B1 B2 ns Fall Time t - 30 f < < Note : Pulse Test: Pulse Width 300ms,Duty Cycle 2.0% - -