X-On Electronics has gained recognition as a prominent supplier of 2N5401-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5401-F Bipolar Transistors - BJT are a product manufactured by Rectron. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5401-F Rectron

2N5401-F electronic component of Rectron
2N5401-F Rectron
2N5401-F Bipolar Transistors - BJT
2N5401-F  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N5401-F
Manufacturer: Rectron
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP 0.6A 150V Transistor
Datasheet: 2N5401-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4648 ea
Line Total: USD 0.46 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4648
10 : USD 0.3447
100 : USD 0.1871
500 : USD 0.1159
1000 : USD 0.0875
2000 : USD 0.075
4000 : USD 0.067
10000 : USD 0.0602
24000 : USD 0.0511

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5401-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5401-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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1. EMITTER z Switching and Amplification in High Voltage z Applications such as Telephony 2. BASE z Low Current 3. COLLECTOR z High Voltage / 0 , 1 2 3 ) * + * , - . - + I * 3 E - = 7 9 . I J K L Collector-Base Voltage -160 V I J M L Collector-Emitter Voltage -150 V I M K L Emitter-Base Voltage -5 V N J Collector Current -0.6 A ) J Collector Power Dissipation 625 mW O P Q Thermal Resistance From Junction To Ambient 200 /W 4 R Junction Temperature 150 4 S T U Storage Temperature -55~+150 % & ( ) * + * , - . - + / 0 , 1 2 3 4 - 5 . 6 2 7 8 9 . 9 2 7 5 : 9 7 4 0 : * < = 7 9 . > 2 3 3 - 6 . 2 + 1 * 5 - 1 + - * 8 2 A 7 B 2 3 . * C - V I = -0.1mA,I =0 -160 V (BR)CBO C E > 2 3 3 - 6 . 2 + - , 9 - + 1 + - * 8 2 A 7 B 2 3 . * C - V I =-1mA,I =0 -150 V (BR)CEO C B D , 9 - + 1 * 5 - 1 + - * 8 2 A 7 B 2 3 . * C - V I =-0.01mA,I =0 -5 V (BR)EBO E C > 2 3 3 - 6 . 2 + 6 E . 2 F F 6 E + + - 7 . I V =-120V,I =0 -50 nA CBO CB E D , 9 - + 6 E . 2 F F 6 E + + - 7 . I V =-3V,I =0 -50 nA EBO EB C h V =5V, I =1mA 80 FE(1) CE C f > 6 E + + - 7 . C * 9 7 h V =5V, I =10mA e 0 300 FE(2) CE C h V =5V, I =50mA 50 FE(3) CE C > 2 3 3 - 6 . 2 + - , 9 - + 5 * . E + * . 9 2 7 B 2 3 . * C - V I =-50mA,I =-5mA -0.5 V CE(sat) C B G * 5 - - , 9 - + 5 * . E + * . 9 2 7 B 2 3 . * C - -1 V V I =-50mA,I =-5mA BE(sat) C B 4 + * 7 5 9 . 9 2 7 F + - H E - 7 6 0 f VCE=-5V,IC=-10mA, f =30MHz 100 300 MHz T *Pulse test: pulse width 300 s, duty cycle 2.0%. O a b c a G > O a b d D 60-300 100-150 150-200 200-300 V W X Y Zl l s q r p n t u v u w x g q v y v x u z y w u w x -20 1000 COMMON COMMON EMITTER -100uA EMITTER V =-5V CE T =25 a -90uA T =100 300 a -16 -80uA T =25 a -70uA 100 -12 -60uA 30 -50uA -8 -40uA 10 -30uA -4 -20uA 3 I =-10uA B -0 1 -0 -5 -10 -15 -20 -0.1 -1 -3 -10 -30 -100 -0.3 -600 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C m n p ~ l l s n m o p ~ l l s n -1000 -300 =10 T =25 a -100 T =100 a T =100 a T =25 a -500 -30 =10 -10 -300 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C s n l l m o p g h i j g k i l l m n o j m p o -100 100 COMMON EMITTER f=1MHz V =-5V CE I =0/I =0 E C T =25 -30 a C ib T =100 a -10 10 -3 T =25 C a ob -1 -0.3 -0.1 1 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -0.3 -1 -3 -10 -20 BASE-EMITTER VOLTAGE V (V) REVERSE BIAS VOLTAGE V (V) BE n l l l l s n 300 750 V =-5V CE T =25 a 250 625 200 500 150 375 100 250 50 125 0 0 -0 -5 -10 -15 -20 -25 -30 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a COLLECTOR-EMMITTER SATURATION COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) C CEsat BASE-EMMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h CAPACITANCE C (pF) FE VOLTAGE V (mV) P (mW) BEsat C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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