X-On Electronics has gained recognition as a prominent supplier of 2N5551-T Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5551-T Bipolar Transistors - BJT are a product manufactured by Rectron. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5551-T Rectron

2N5551-T electronic component of Rectron
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Part No.2N5551-T
Manufacturer: Rectron
Category: Bipolar Transistors - BJT
Description: Rectron Bipolar Transistors - BJT NPN 0.6A 160V
Datasheet: 2N5551-T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.396 ea
Line Total: USD 0.4 
Availability - 7579
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7579
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.396
10 : USD 0.2937
100 : USD 0.1661
1000 : USD 0.0847
2000 : USD 0.0726
10000 : USD 0.0583
24000 : USD 0.0539
50000 : USD 0.0528

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5551-T from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5551-T and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5551 TO-92 NPN HIGH VOLTAGE TRANSISTOR For Lead Free Parts, Device Part will be Prefixed with C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -Base Voltage VCBO 180 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 600 mA Power Dissipation Ta=25 degC PD 625 mW Derate Above 25 deg C 5.0 mw/deg C Power Dissipation Tc=25 degC PD 1.5 W Derate Above 25 deg C 12 mw/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 deg C/W Junction to Ambient Rth(j-a) (1) 357 deg C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 - - V Collector -Base Voltage VCBO IC=100uA.IE=0 180 - - V Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 - - V Collector-Cut off Current ICBO VCB=160V, IE=0 - - 50 nA Ta=100 deg C VCB=160V, IE=0 - - 50 uA Emitter-Cut off Current IEBO VEB=4V, IC=0 - - 50 nA DC Current Gain hFE* IC=1mA,VCE=5V 80 - - IC=10mA,VCE=5V 80 - 250 IC=50mA,VCE=5V 30 - - Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA - - 0.15 V IC=50mA,IB=5mA - - 0.2 V Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA - - 1.0 V IC=50mA,IB=5mA - - 1.0 V Page 1 of 4 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Sp ecified) 2N5551 DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Dy namic Characteristics Small Signal Current Gain hfe IC=1mA, VCE=10V 50 - 200 f=1KHz Transition Frequency ft VCE=10V,IC=10mA, 100 - 300 MHz f=100MHz Outp ut Cap acitance Cob VCB=10V, IE=0 - - 6.0 pF f=1MHz Inp ut Cap acitance Cib VEB=0.5V, IC=0 - - 20 pF f=1MHz Noise Figure NF VCE=5V, IC=250uA - - 8.0 dB R=1kohm, f=10Hz to 15.7kHz *Pulse Test: Pulse Width=300us, Duty Cycle=2% Packaging Information T & A: Tape and Ammo Pack T & R: Tape and Reel Bulk: Loose in Poly bags Tube: Tube and Ammo Pack k: 1.000 Std. Packing Inner Carton Outer Carton Package/Case Packaging Type Size L x W x H Gross Weight Size L x W x H Gross Weight Type Qty Qty Qty (cm) (Kg) (cm) (Kg) Bulk 1,000 5K 19x19x8 1.10 80K 43x40x35 20.0 TO-92 T&A 2,000 2K 32x4.5x20 0.70 40K 43x40x35 15.20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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