EDB106S Rectron

EDB101S THRU EDB106S GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * Surge overload rating - 40 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body DB-S * Mounting position: Any * Weight: 1.0 gram .310 (7.9) .290 (7.4) .255 (6.5) MECHANICAL DATA ( ) .245 6.2 * Epoxy: Device has UL flammability classification 94V-O .009 (0.229) ( ) .013 .330 .003 (.076) .410 (10.4) .042 (1.1) .360 (9.4) ( ) .038 1.0 .060 (1.524) ( ) .040 1.016 .346 (8.8) ( ) 0.135 3.4 (7.8) .307 0.115 (2.9) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified205 (5.2) Single phase, half wave, 60 Hz, resistive or inductive load195 (5.0) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At T = 25 C unless otherwise noted) A RATINGS SYMBOL EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S UNITS V 50 100 150 200 300 400 Volts Maximum Recurrent Peak Reverse Voltage RRM Maximum RMS Bridge Input Voltage V 35 70 105 140 210 280 Volts RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 Volts DC o Maximum Average Forward Output Current at T = 55 C I 1.0 Amps A O Peak Forward Surge Current 8.3 ms single half sine-wave I 30 Amps FSM superimposed on rated load (JEDEC method) R qJA 38 0 C/W Typical Thermal Resistance (Note 3) R qJL 12 pF Typical Junction Capacitance (Note 2) C J 15 10 0 Operating and Storage Temperature Range TJ,TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At T = 25 C unless otherwise noted) A CHARACTERISTICS SYMBOL UNITS EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S Volts V 1.05 1.35 Maximum Forward Voltage at 1.0A DC F o uAmps Maximum Reverse Current at Rated T = 25 C 5.0 A I R o DC Blocking Voltage per element T = 100 C A 100 uAmps Maximum Reverse Recovery Time (Note 1) trr 50 nSec Note: 1.Test Conditions: I =0.5A,I =-1.0A,I =-0.25A. 2007-08 F R RR 2.Measured at 1MHz and applied reverse voltage of 4.0 volts. 3.Thermal Resistance : Mounted on PCB.RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB106S ) trr +0.5A 50 W 10 W NONINDUCTIVE NONINDUCTIVE ( - ) D.U.T 0 ( + ) PULSE 25 Vdc GENERATOR (approx) (NOTE 2) -0.25A ( - ) 1 ( + ) OSCILLOSCOPE NON- (NOTE 1) INDUCTIVE NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. -1.0A 2. Rise Time = 10ns max. Source Impedance = 1cm 50 ohms. SET TIME BASE FOR 20/1 ns/cm FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 2.0 1000 100 O T = 100 C A O T = 75 C A 1.0 10 O T = 25 C A 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 0.1 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 O LEAD TEMPERATURE, ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.2 TYPICAL FORWARD CURRENT FIG.3 TYPICAL REVERSE DERATING CURVE CHARACTERISTICS AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA)