TVS P4FMAJ SERIES SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATTS STEADY STATE FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 400 watt surage capability at 1ms * Excellent clamping capability DO-214AC * Low zener impedance * Fast response time 0.067 (1.70 ) 0.110 ( 2.79 ) 0.051 (1.29 ) 0.086 ( 2.18 ) 0.180 ( 4.57 ) 0.160 ( 4.06 ) 0.012 ( 0.305 ) 0.006 ( 0.152 ) 0.091 ( 2.31 ) 0.067 ( 1.70 ) 0.059 ( 1.50 ) 0.008 ( 0.203 ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.035 ( 0.89 ) 0.004 ( 0.102 ) o Ratings at 25 C ambient temperature unless otherwise specified. 0.209 ( 5.31 ) Single phase, half wave, 60 Hz, resistive or inductive load, 0.185 ( 4.70 ) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) O MAXIMUM RATINGS ( TA=25 C unless otherwise noted) SYMBOL VALUE UNITS RATINGS O Peak Power Dissipation at T = 25 C,T = 1mS (Note 1) P Minimum 400 W A P PPM Peak Pulse Current with a 10/1000uS waveform A IPPM SEE TABLE 1 ( Note 1, Fig.3 ) O Steady State Power Dissipation at T = 75 C lead length, L P M(AV) 1.0 W .375 (9.5 mm) (Note 2) Peak Forward Surge Current, 8.3ms single half sine wave- I FSM 40 A superimmposed on rated load ( JEDEC METHOD ) (Note 3) Maximum Instantaneous Forward Voltage 25A for unidirectional V 3.5/6.5 V F only ( Note 5 ) 0 Operating and Storage Temperature Range T , T -55 to + 150 C J STG o 2013-01 NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2. REV: O 2. Mounted on 0.2 X 0.2 (5.0 X 5.0mm) copper pad to each terminal. 3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum. 4.Fully ROHS complian,100% Sn plating (Pb-free. 5. VF = 3.5V max. for devices of V(BR) < 200V and VF = 6.5V max. for devices of V(BR) > 200V.( ) RATING AND CHARACTERISTIC CURVES P4FMAJ6.8 THRU P4FMAJ400CA FIG. 1 - PEAK PULSE POWER RATING CURVE FIG. 2 - PULSE DERATING CURVE 100 100 Non-Repetitive Pulse Waveform Shown in Fig.3 75 TA = 25 10 50 1.0 25 0.2X0.2 (5.0X5.0mm) copper pad areas 0.1 0 0.1uS 1.0uS 10uS 100uS 1.0mS 10mS 025 50 75 100 125 150 175 200 TP, PULSE WIDTH, sec TA, AMBIENT TEMPERATURE,( ) FIG. 3 - PULSE WAVEFORM FIG. 4 - TYPICAL JUNCTION CAPACITANCE 150 100000 Pulse Width (td) is Defined tr = 10usec. as the Point Where the Peak f = 1.0 MHz Current Decays to 50% of IPPM Vsig = 50mVp-p Peak Value TJ = 25 IPPM 100 10000 Measured at IPPM HALF VALUE - Zero Bias 2 10/1000usec. Waveform as Defined by R.E.A. 50 Measured at Devices 1000 Stand off Voltage,VWM 100 0 0 1.0 2.0 3.0 4.0 1.0 10 100 200 t, TIME,mS V(BR), BREAKDOWN VOLTACE, VOLTS RECTRON IPPM, PEAK PULSE CURRENT,% PPPM, PEAK PULSE POWER, KW CJ, CAPACITANCE, pF (IPP) DERATING IN PERCENTAGE,% PEAK PULSE POWER (PPP) OR CURRENT