PN 2 2 2 2A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 0.14 (3.6) 0.18 (4.6) FEATURES * Power dissipation O PCM: 625mW (Tamb=25 C) Collector current * ICM: 0.6 A Collector-base voltage * V : 75 V (BR)CBO Operating and storage junction temperature range * O O T ,Tstg: -55 C to+150 C J MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram max. 0.022 (0.55) 0.098 (2.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in inches o Ratings at 25 C ambient temperature unless otherwise specified. and (millimeters) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. (TO-92) Bottom O MAXIMUM RATINGES ( T = 25 C unless otherwise noted) A RATINGS SYMBOL VALUE UNITS o O (1) Max. Steady State Power Dissipation TA=25 C Derate above 25 C PD 625 mW o Max. Operating Temperature Range TJ 150 C o Storage Temperature Range TSTG -55 to +150 C O ELECTRICAL CHARACTERISTICS ( T = 25 C unless otherwise noted) A CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS o Thermal Resistance Junction to Ambient R q JA - - 200 C/W Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2011-2 2.Fully ROHS Complian,100% Sn plating (Pb-free. 0.18 (4.6) min. 0.49 (12.5) O ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I = 10mAdc, I = 0) V 40 - Vdc C B (BR)CEO Collector-Base Breakdown Voltage (I = 10u Adc, I = 0) V 75 - Vdc C E (BR)CBO Emitter-Base Breakdown Voltage (I = 10u Adc, I = 0) V 6.0 - Vdc E C (BR)EBO I Collector Cutoff Current (V = 60Vdc,V = 3.0Vdc - 0.01 uAdc CEX CE EB(off) Collector Cutoff Current (V = 60Vdc, I = 0) - 0.01 CB E I uAdc CBO O (V = 60Vdc, I = 0, TA= 150 C) - 10 CB E I Emitter Cutoff Current (V = 3.0Vdc, I = 0) EBO - 0.01 uAdc EB C I Base Cutoff Current (V = 60Vdc, V = 3.0Vdc - 20 nAdc BL CE EB(off) ON CHARACTERISTICS O DC Current Gain (I = 10mAdc, V = 10Vdc, TA= -55 C) 35 - C CE hFE - (I = 500mAdc, V = 10Vdc) (1) 40 - C CE Collector-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc) 0.3 - C B V Vdc CE(sat) (I = 500mAdc, I = 50mAdc) - 1.0 C B Base-Emitter Saturation Voltage (1) (I = 150mAdc, I = 15mAdc) 0.6 1.2 C B V Vdc BE(sat) (I = 500mAdc, I = 50mAdc) - 2.0 C B SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I = 20mAdc, V = 20Vdc, f= 100MHz) f 300 - MHz C CE T Input Capacitance (V =0.5Vdc, I = 0, f= 1.0MHz) C - 25 pF EB C ibo Input Impedance (I = 1.0mAdc, V =10Vdc, f=1.0kHz) 2.0 8.0 C CE kohms h ie (I = 10mAdc, V =10Vdc, f=1.0kHz) 0.25 1.25 C CE Voltage Feedback Ratio (I = 1.0mAdc, V = 10Vdc, f= 1.0kHz) - 8.0 C CE -4 h X 10 re (I = 10mAdc, V =10Vdc, f= 1.0kHz) - 4.0 C CE Small-Signal Current Gain (I = 1.0mAdc, V = 10Vdc, f= 1.0kHz) 50 300 C CE h - fe 75 (I = 10mAdc, V = 10Vdc, f= 1.0kHz) 375 C CE Output Admittance (I = 1.0mAdc, V = 10Vdc, f= 1.0kHz) 5.0 35 C CE h umhos oe (I = 10mAdc, V = 10Vdc, f= 1.0kHz) 25 200 C CE Collector Base Time Constant (I = 20mAdc, V = 20Vdc, f= 31.8MHz) rb,Cc - 150 ps E CB Noise Figure (I = 100u Adc, V = 10Vdc, R = 1.0kohms NF - 4.0 dB , f= 1.0kHz) C CE S SWITCHING CHARACTERISTICS Delay Time t - 10 d (V = 30Vdc, V = -0.5Vdc, I = 150mAdc, I = 15mAdc) CC BE(off) C B1 ns Rise Time t - 25 r Storage Time t - 225 s (V = 30Vdc, I = 150mAdc, I = I = 15mAdc) ns CC C B1 B2 Fall Time t - 60 f < < NOTES : 1. Pulse Test: Pulse Width 300ms,Duty Cycle 2.0% - - 2. f is defined as the frequency at which h extrapolates to unity T fe