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X-On Electronics has gained recognition as a prominent supplier of 7164S25YG SRAM across the USA, India, Europe, Australia, and various other global locations. 7164S25YG SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

7164S25YG Renesas

7164S25YG electronic component of Renesas
7164S25YG Renesas
7164S25YG SRAM
7164S25YG  Semiconductors

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See Product Specifications
Part No. 7164S25YG
Manufacturer: Renesas
Category: SRAM
Description: SRAM 64K(8KX8) BICMOS STAT RAM
Datasheet: 7164S25YG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.897 ea
Line Total: USD 6.9 
Availability - 475
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
475
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 6.897
10 : USD 6.765
27 : USD 5.896
108 : USD 5.72
270 : USD 5.632
513 : USD 5.357
1026 : USD 5.181
5022 : USD 5.115

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 7164S25YG from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 7164S25YG and other electronic components in the SRAM category and beyond.

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CMOS Static RAM 7164S 64K (8K x 8-Bit) 7164L Features Description High-speed address/chip select access time The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K Commercial: 20/25ns (max.) x 8. It is fabricated using high-performance, high-reliability CMOS tech- Industrial: 20/25ns (max.) nology. Military: 20/25/35/45/55/70/85/100ns (max.) Address access times as fast as 20ns are available and the circuit offers Low power consumption a reduced power standby mode. When CS1 goes HIGH or CS2 goes Battery backup operation 2V data retention voltage LOW, the circuit will automatically go to, and remain in, a low-power stand- (L Version only) by mode. The low-power (L) version also offers a battery backup data Produced with advanced CMOS high-performance retention capability at power supply levels as low as 2V. technology All inputs and outputs of the IDT7164 are TTL-compatible and Inputs and outputs directly TTL-compatible operation is from a single 5V supply, simplifying system designs. Fully Three-state outputs static asynchronous circuitry is used, requiring no clocks or refreshing Available in 28-pin DIP, CERDIP and SOJ for operation. Military product compliant to MIL-STD-883, Class B The IDT7164 is packaged in a 28-pin 300 mil CERDIP, a 28-pin 600 Industrial temperature range (40C to +85C) is available mil CERDIP, 300mil Plastic DIP and 300mil SOJ for selected speeds Military grade product is manufactured in compliance with MIL-STD- Green parts available, see ordering information 883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Functional Block Diagram A0 VCC GND 65,536 BIT ADDRESS DECODER MEMORY ARRAY A 12 7 0 I/O 0 I/O CONTROL I/O7 CS1 CS2 CONTROL LOGIC OE 2967 drw 01 WE 1 Jul.30.207164S/L CMOS Static RAM 64K (8K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges (1) (1) Pin Configurations Absolute Maximum Ratings Symbol Rating Com l. Mil. Unit (2) VCC NC 1 VTERM Terminal Voltage -0.5 to +7.0 -0.5 to +7.0 V 28 with Respect A12 WE 2 27 to GND CS2 A7 3 26 o A8 A6 4 25 TA Operating 0 to +70 -55 to +125 C 7164 A9 Temperature A5 5 24 CD28 A4 A11 6 23 o SD28 Temperature -55 to +125 -65 to +135 C TBIAS OE A3 7 22 PJG28 Under Bias PTG28 A2 A10 8 21 o TSTG Storage Temperature -55 to +125 -65 to +150 C CS1 A1 9 20 I/O7 A0 10 19 PT Power Dissipation 1.0 1.0 W I/O6 I/O0 11 18 IOUT DC Output Current 50 50 mA 17 I/O1 I/O5 12 16 I/O4 I/O2 13 2967 tbl 02 NOTES: 15 I/O3 GND 14 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional 2967 drw 02 operation of the device at these or any other conditions above those indicated in the DIP/SOJ operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Top View 2. VTERM must not exceed VCC + 0.5V. NOTE: 1. This text does not indicate orientation of actual part-marking. (1,2,3) Truth Table WE CS1 OE Pin Descriptions CS2 I/O Function Name Description X H X X High-Z Deselected - Standby (ISB) A0 - A12 Address X X L X High-Z Deselected - Standby (ISB) I/O0 - I/O7 Data Input/Output X VHC or X High-Z Deselected - Standby (ISB1) VHC VLC Chip Select CS1 XX VLC X High-Z Deselected - Standby (ISB1) 2 Chip Select CS H L H H High-Z Output Disabled WE Write Enable HL H L DATAOUT Read Data OE Output Enable LL H X DATAIN Write Data GND Ground 2967 tbl 03 NOTES: VCC Power 1. CS2 will power-down CS1, but CS1 will not power-down CS2. 2. H = VIH, L = VIL, X = don t care. 2967 tbl 01 3. VLC = 0.2V, VHC = VCC - 0.2V Recommended DC Operating Recommended Operating Conditions Temperature and Supply Voltage Symbol Parameter Min. Typ. Max. Unit Grade Temperature GND Vcc VCC Supply Voltage 4.5 5.0 5.5 V O O Military -55 C to +125 C0V 5V 10% GND Ground 0 0 0 V O O Industrial -40 C to +85 C0V 5V 10% VIH Input HIGH Voltage 2.2 VCC + 0.5 V O O Commercial 0 C to +70 C0V 5V 10% (1) VIL Input LOW Voltage -0.5 0.8 V 2967 tbl 04 2967 tbl 05 NOTE: 1. VIL (min.) = 1.5V for pulse width less than 10ns, once per cycle. 2 Jul.30.20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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