BCR25RM-12LB
Triac
Medium Power Use
REJ03G1715-0100
Rev.1.00
Jul 10, 2008
Features
I : 25 A The product guaranteed maximum junction
T (RMS)
temperature of 150C
V : 600 V
DRM
Insulated Type
I , I , I : 50 mA
FGTI RGTI RGTIII
Planar Type
V : 2000 V
iso
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Voltage class
Parameter Symbol Unit
12
Note1
Repetitive peak off-state voltage V 600 V
DRM
Note1
Non-repetitive peak off-state voltage V 720 V
DSM
Notes: 1. Gate open.
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 1 of 7 BCR25RM-12LB
Parameter Symbol Ratings Unit Conditions
RMS on-state current I 25 A Commercial frequency, sine full wave 360
T (RMS)
conduction, Tc = 96C
Surge on-state current I 250 A 50 Hz sinewave 1 full cycle, peak value,
TSM
non-repetitive
2 2 2
I t for fusion It 313 A s Value corresponding to 1 cycle of half wave 50
Hz, surge on-state current
Peak gate power dissipation P 5 W
GM
Average gate power dissipation P 0.5 W
G (AV)
Peak gate voltage V 10 V
GM
Peak gate current I 2 A
GM
Junction Temperature Tj 40 to +150 C
Storage temperature Tstg 40 to +150 C
Mass 5.2 g Typical value
Isolation voltage V 2000 V Ta = 25C, AC 1 minute,
iso
T T G terminal to case
1 2
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current I 3.0/5.0 mA Tj = 125C /150C, V applied
DRM DRM
On-state voltage V 1.5 V Tc = 25C, I = 40 A,
TM TM
instantaneous measurement
Note2
Gate trigger voltage V 2.0 V Tj = 25C, V = 6 V, R = 6 ,
FGT D L
R = 330
G
V 2.0 V
RGT
V 2.0 V
RGT
Note2
Gate trigger curent I 50 mA Tj = 25C, V = 6 V, R = 6 ,
FGT D L
R = 330
G
I 50 mA
RGT
I 50 mA
RGT
Gate non-trigger voltage V 0.2/0.1 V Tj = 125C /150C, V = 1/2 V
GD D DRM
Note3
Thermal resistance R 1.7 C/W Junction to case
th (j-c)
Critical-rate of rise of off-state (dv/dt)c 10/1 V/s Tj = 125C /150C
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R in case of greasing is 0.5C/W.
th (c-f)
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125/150C
(di/dt)c
2. Rate of decay of on-state commutating current
Time
Main Current
(di/dt)c = 13 A/ms
Main Voltage Time
3. Peak off-state voltage
(dv/dt)c
V = 400 V V
D
D
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 2 of 7