Data Sheet CR02AM-8 R07DS1423EJ0300 (Previous: REJ03G0351-0200) 400V - 0.2A - Thyristor Rev.3.00 Low Power Use Dec. 12, 2018 Features I : 0.3 A Planar Passivation Type T (AV) V : 400 V Halogen-free package (PRSS0003DJ-A) DRM I : 100 A Completely Pb-free package (PRSS0003DJ-A) GT RoHS Compliant Outline RENESAS Package code: PRSS0003EA-A PRSS0003DJ-A (Package name: TO-92*) (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 3 2 2 1 1 Application Solid state relay, leakage protector, timer, electric blanket, strobe flasher, and other general purpose applications. Maximum Ratings Parameter Symbol Voltage class Unit 8 Repetitive peak reverse voltage VRRM 400 V Non-repetitive peak reverse voltage V 500 V RSM Note1 Repetitive peak off-state voltage VDRM 400 V Notes: 1. With gate to cathode resistance RGK=1 k Parameter Symbol Ratings Unit Conditions RMS on-state current I 0.47 A T (RMS) Average on-state current IT (AV) 0.3 A Commercial frequency, sine half wave 180conduction, Ta = 30C Surge on-state current I 10 A 60 Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusing I t 0.4 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation P 0.1 W GM Average gate power dissipation PG (AV) 0.01 W Peak gate forward voltage V 6 V FGM Peak gate reverse voltage VRGM 6 V Peak gate forward current I 0.1 A FGM Junction temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C R07DS1423EJ0300 Rev.3.00 Page 1 of 8 Dec. 12, 2018 CR02AM-8 Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I 0.1 mA Tj = 125C, V applied RRM RRM Repetitive peak off-state current IDRM 0.1 mA Tj = 125C, VDRM applied RGK=1 k On-state voltage V 1.6 V Tc = 25C, I = 0.6 A, TM TM instantaneous value Gate trigger voltage VGT 0.8 V Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage V 0.2 V Tj = 125C, V = 1/2 V GD D DRM RGK=1 k Note2 Gate trigger current I 1 100 A Tj = 25C, V = 6 V, GT D Note3 I = 0.1 A T Holding current IH 3 mA Tj = 25C, VD = 12 V, RGK=1 k Thermal resistance R 180 C/W Junction to ambient th (j-a) Notes: 2. If special values of I are required, choose item D or E from those listed in the table below if possible. GT Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. 60W A1 I I GS GT TUT A3 A2 6V 3V V1 DC R GK DC 1 2 1kW V GT Switch Switch 1 : I measurement GT Switch 2 : V measurement GT (Inner resistance of voltage meter is about 1kW) R07DS1423EJ0300 Rev.3.00 Page 2 of 8 Dec. 12, 2018