X-On Electronics has gained recognition as a prominent supplier of F1152NBGI Up-Down Converters across the USA, India, Europe, Australia, and various other global locations. F1152NBGI Up-Down Converters are a product manufactured by Renesas. We provide cost-effective solutions for Up-Down Converters, ensuring timely deliveries around the world.

F1152NBGI Renesas

F1152NBGI electronic component of Renesas
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Part No.F1152NBGI
Manufacturer: Renesas
Category: Up-Down Converters
Description: Up-Down Converters RF MIXER 0.35 UM SIGE BICMOS
Datasheet: F1152NBGI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.376 ea
Line Total: USD 13.38 
Availability - 458
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
458
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 13.376
10 : USD 11.055
25 : USD 10.736
100 : USD 10.637
250 : USD 10.34
490 : USD 9.185
980 : USD 9.185
2940 : USD 9.185
5390 : USD 9.185

   
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We are delighted to provide the F1152NBGI from our Up-Down Converters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F1152NBGI and other electronic components in the Up-Down Converters category and beyond.

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DATASHEET RF to IF Dual Downconverting Mixer 1400 - 2200 MHz F1152NBGI FEATURES GENERAL DESCRIPTION Dual Path for Diversity Systems This document describes the specifications for the TM Ideal for Multi-Carrier Systems IDTF1152 Zero-Distortion RF to IF Downconverting 8.5 dB Gain Mixer. This device is part of a series of mixers offered Ultra linear +43 dBm IP3 +43 dBm IP3 with high side or low side injection options for all UTRA OO Low NF < 10 dB bands. See the Part Matrix for the details of all devices 200 output impedance in this series. Ultra high +13 dBm P1dB I The F1152 dual channel device is designed to operate PPiinn CCoommppaattiibbllee w/existing solutions with a single 5V supply. It is optimized for operation in 6x6 36 pin package a Multi-mode, Multi-carrier BaseStation Receiver for RF PPoowweerr DDoowwnn mmooddee bands from 1700 - 2200 MHz with Low Side Injection < 200 nsec settling from Power Down or from 1400 to 1700 MHz with High Side Injection. IF Minimizes Synth pulling in Standby Mode frequencies from 50 to 350 MHz are supported. Low Current Mode : I = 232 mA I = 232 mA CCCC Nominally, the device offers +43 dBm Output IP3 with Standard Mode: I = 327 mA CC 327 mA of I . Alternately one can adjust 4 resistor CC NOTE production BOM on p. 20 values and a toggle pin to run the device in low current mode with +40 dBm Output IP3 and 232 mA of I . CC DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE In typical basestation receivers the RF to IF mixer dominates the linearity performance for the entire TM receive system. The Zero-Distortion family of mixers RF IN A dramatically improve the maximum signal levels (IM IF 3 OUT A tones) that the BTS can withstand at a desired Signal to Noise Ratio (SNR.) Alternately, one can run the device STBY RF VCO Bias 2 in Low Current Mode to reduce Power consumption LOISET Control TM significantly. Zero-Distortion technology allows LCMODE realization of either benefit. RF IN B IP3 : 9 dB STD Mode, 6 dB LC Mode O IF OUT B Dissipation: 40% LC Mode, 12% STD Mode Allows for higher RF gain improving Sensitivity PART MATRIX ORDERING INFORMATION Part RF freq UTRA bands IF freq Typ. Injection range range Gain Omit IDT Tape & 0.8 mm height 5,6,8,12,13,14,17 prefix Reel F1100 698 - 915 50 - 450 8.5 High Side package ,19,20 5,6,8,12,13,14,17 F1102 698 - 915 50 - 250 8.5 Both ,19,20 1,2,3,4,9,10, 33, IDTF1152NBGI8 F1150 1700 - 2200 50 - 450 8.5 High Side 34,35, 36, 37,39 11 11,,22,,33,,44,,99,,1100,,1111 ,, 11 11 Green FF11115522 11440000 -- 22220000 2211 ,, 2244 ,, 3333,, 5500 -- 335500 88..55 LLooww SSiiddee RF product Line Industrial 34,35, 36, 37,39 34,35, 36, 37,39 Temp range F1162 2300 2700 7,38,40,41 50 500 8.9 Both 1 with High side injection TM IDT Zero-Distortion Mixer 1 Rev1, June 2012 DATASHEET RF to IF Dual Downconverting Mixer 1400 - 2200 MHz F1152NBGI ABSOLUTE MAXIMUM RATINGS VCC to GND -0.3V to +5.5V STBY, LC -0.3V to (VCC + 0.3V) MODE IF A+, IF B+, IF A-, IF B-, LO1 ADJ, LO2 ADJ -0.3V to (VCC + 0.3V) LO IN, LO IN ALT, RF A, RF B -0.3V to +0.3V IF BiasA, IF BiasB to GND -0.3V to +0.3V RF Input Power (RF IN A+, A-, B+, B- ) +20dBm Continuous Power Dissipation 2.2W (Junction Ambient) +35C/W JA (Junction Case) The Case is defined as the exposed paddle +2.5C/W JC Operating Temperature Range (Case Temperature) T = -40C to +100C C Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) . +260C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TM IDT Zero-Distortion Mixer 2 Rev1, June 2012

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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