RF Dual Wideband Gain-Settable F1192B Downconverting Mixer Datasheet FEATURES GENERAL DESCRIPTION RF range: 400MHz to 3800MHz This document describes the specifications for the LO range: 400MHz to 3600MHz IDTF1192B Dual Wideband, Gain-Settable, Zero- IF Range: 50MHz to 600MHz TM TM Flat-Noise , RF to IF Downconverting Mixer. Distortion Dual Path for MIMO The F1192B has been optimized for GSM systems as 4 Gain Settings 11dB, 8dB, 5dB, 2dB well as those utilizing LTE. 2 bit gain step control Ideal for Multi-Carrier Systems The F1192B offers very low power consumption with +35dBm OIP3 excellent linearity. In addition to this and the four Low Noise Figure at any gain setting via IDTs dynamically adjustable gain settings, the F1192B TM FlatNoise technology performance is exceptional across an extremely broad Z = 200 IF balanced, 50 RF, 50 LO range of RF and IF frequencies. All of this makes it single ended ideal for myriad applications including: All internally matched. Single BOM for all RF, 2G/3G/4G/5G/Multimode Remote Radio Units LO and IF frequencies 4 mm x 4 mm, 24-pin TQFN package High order MIMO systems, cells, picocells, DAS Independent Path Standby mode Point to Point Wave Backhaul systems 75 nsec settling for gain adjustment Broadband Repeaters VCC = 3.3V, 835 mW, 620 mW (low power mode) Public Safety Infrastructure Any radio system operating between 400 MHz and 4000 MHz FUNCTIONAL BLOCK DIAGRAM COMPETITIVE ADVANTAGE F1192B offers maximum performance and flexibility at minimum power consumption. The unique and patented settable-gain feature allows it to be used in a very wide variety of radiocard applications, even allowing for dynamic adjustment of gain to maximize performance on the fly. The extremely wide RF and IF bandwidths are achieved with a fixed BOM with all internal matching. The device can function with as little as -6 dBm LO power and with independent channel shutdown modes for ease of integration into high order TDD MIMO systems. BAND PERFORMANCE SUMMARY RF Frequency (MHz) 900 1900 2600 3500 Gain (max G setting) 11.0 10.8 10.3 9.0 11 Gain (min G setting) 2.5 2.3 1.8 0.5 2 NF max gain (dB) 8.9 8.7 10.0 10.9 IIP3 min gain (dBm) 28 27 29 30 OIP3 G (dBm) 37 34 35 35 8 IP1dB min gain (dBm) 13.6 14.7 14.6 15.8 2x2 min gain (dBc) -75 -82 -73 -68 Channel Isolation (dB) 48 47 48 45 Pdiss (mW) 792 835 875 935 2017 Integrated Device Technology, Inc. 1 Rev O August 29, 2017 F1192B Datasheet ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND V -0.5 +3.6 V CC STBY A, STBY B, Gain Select1, V -0.5 Vcc + 0.5 V Gain Select2, RF A, RF B, LO1 ADJ, CTRL LO2 ADJ IF A+, IF A-, IF B+, IF B- IF 2.4 Vcc + 0.5 V OUT LO -0.5 +0.5 V LO IN IN IF BiasA, IF BiasB IF 50 ohms BIAS IF 500 ohms IF Ref Bias REF RF Input Power (RF A, RF B) continuous RF +20 dBm MAX LO +20 dBm LO Input Power (LO IN) continuous MAX Continuous Power Dissipation P 1.5 W DISS Junction Temperature T 150 C j Storage Temperature Range T -65 150 C ST Lead Temperature (soldering, 10s) T 260 C LEAD ElectroStatic Discharge HBM Class 2 (JEDEC/ESDA JS-001-2012) (2500 V) ElectroStatic Discharge CDM Class C3 (JEDEC 22-C101F) (1000 V) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 45 C/W JA (Junction Case) The Case is defined as the exposed paddle 2.1 C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 2017 Integrated Device Technology, Inc. 2 Rev O August 29, 2017