QS3VH126S1G8 Renesas

IDTQS3VH126 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH126 is a high bandwidth bus switch. The QS3VH126 has Isolation under power-off conditions very low ON resistance, resulting in under 250ps propagation delay No DC path to VCC or GND through the switch. The switches can be turned ON under the control 5V tolerant in OFF and ON state of individual LVTTL-compatible active high Output Enable signals for 5V tolerant I/Os bidirectional data flow with no added delay or ground bounce. In the ON Low RON - 4 typical state, the switches can pass signals up to 5V. In the OFF state, the Flat RON characteristics over operating range switches offer very high impedence at the terminals. Rail-to-rail switching 0 - 5V The combination of near-zero propagation delay, high OFF imped- Bidirectional dataflow with near-zero delay: no added ground ance, and over-voltage tolerance makes the QS3VH126 ideal for high bounce performance communications applications. Excellent RON matching between channels The QS3VH126 is characterized for operation from -40C to +85C. VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in QSOP and SOIC packages APPLICATIONS: Hot-swapping 10/100 Base-T, Ethernet LAN switch Low distortion analog switch Replaces mechanical relay ATM 25/155 switching FUNCTIONAL BLOCK DIAGRAM 1A 2A 3A 4A 1OE 2OE 3OE 4OE 1Y 2Y 3Y 4Y The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE JANUARY 2013 1 c 2013 Integrated Device Technology, Inc. DSC-5774/13IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V NC 1 16 VCC VAC AC Input Voltage (pulse width 20ns) 3 V IOUT DC Output Current (max. sink current/pin) 120 mA 1OE 2 15 4OE TSTG Storage Temperature 65 to +150 C 1A 3 14 4A NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause 1Y 4 13 4Y permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational 2OE 5 12 3OE sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2A 6 11 3A 2. VCC terminals. 3. All terminals except VCC . 2Y 7 10 3Y 9 GND 8 NC QSOP CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = TOP VIEW (1) 0V)Symbol Parameter Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF CI/O Quickswitch Channels (Switch ON) 8 12 pF NOTE: 1. This parameter is guaranteed but not production tested. 1OE 1 VCC 14 PIN DESCRIPTION 1A 2 4OE 13 Pin Names I/O Description 1Y 3 4A 12 1A - 4A I/O Bus A 1Y - 4Y I/O Bus Y 2OE 4 11 4Y 1OE - 4OE I Output Enable 2A 5 10 3OE 2Y 6 9 3A (1) GND 7 8 3Y FUNCTION TABLE OE A Y Function H H H Connect SOIC TOP VIEW H L L Connect L X X Disconnect NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don t Care 2