QS3VH244QG Renesas

IDTQS3VH244 INDUSTRIAL TEMPERATURE RANGE 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS IDTQS3VH244 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH244 HotSwitch is a high bandwidth, 8-bit bus switch. The Isolation under power-off conditions QS3VH244 has very low ON resistance, resulting in under 250ps propagation No DC path to VCC or GND delay through the switch. The switches can be turned ON under the control 5V tolerant in OFF and ON state of the LVTTL-compatible xG signal for bidirectional data flow with no added delay 5V tolerant I/Os or ground bounce. In the ON state, the switches can pass signals up to 5V. In Low RON - 4 typical the OFF state, the switches offer very high impedence at the terminals. Flat RON characteristics over operating range The combination of near-zero propagation delay, high OFF impedence, and Rail-to-rail switching 0 - 5V over-voltage tolerance makes the QS3VH244 ideal for high performance Bidirectional dataflow with near-zero delay: no added ground communications applications. bounce The QS3VH244 is characterized for operation from -40C to +85C. Excellent RON matching between channels VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in QSOP and TSSOP packages APPLICATIONS: Hot-swapping 10/100 Base-T, Ethernet LAN switch Low distortion analog switch Replaces mechanical relay ATM 25/155 switching Bus switching and isolation FUNCTIONAL BLOCK DIAGRAM 1G 2G 1A1 1Y1 2Y1 2A1 1A2 1Y2 2A2 2Y2 1A3 2A3 1Y3 2Y3 1A4 1Y4 2A4 2Y4 The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE MAY 2013 1 c 2013 Integrated Device Technology, Inc. DSC-5894/14IDTQS3VH244 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V 1 20 VCC 1G (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V VAC AC Input Voltage (pulse width 20ns) 3 V 1A1 19 2 2G IOUT DC Output Current (max. sink current/pin) 120 mA 18 3 1Y1 2Y4 TSTG Storage Temperature 65 to +150 C NOTES: 17 2A4 4 1A2 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation 16 2Y3 5 1Y2 of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 15 1A3 6 2A3 2. VCC terminals. 3. All terminals except VCC . 14 2Y2 7 1Y3 13 2A2 1A4 8 12 2Y1 9 1Y4 CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = 0V) 11 GND 10 2A1 (1) Symbol Parameter Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF QSOP/ TSSOP CI/O Quickswitch Channels (Switch ON) 8 12 pF TOP VIEW NOTE: 1. This parameter is guaranteed but not production tested. PIN DESCRIPTION Pin Names Description xG Output Enable xAx Data I/Os xYx Data I/Os (1) FUNCTION TABLE xG Outputs H Disconnected L xAx = xYx NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level 2