2SB1427T100E ROHM

2SB1427 Datasheet Middle Power Transistor (-20V, -2A) llOutline SOT-89 Parameter Value SC-62 V -20V CEO I -2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage, V :Max.-500mV at I /I =-1/-50mA. CE(sat) C B 2)Excellent DC current gain characteristics. llApplication LOW FREQUENCY POWER AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SB1427 4540 T100 180 12 1000 BJ (MPT3) www.rohm.com 1/6 20160107 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SB1427 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -20 V CBO V Collector-emitter voltage -20 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -3 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -20 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -6 - - V EBO E I V = -16V Collector cut-off current - - -500 nA CBO CB I Emitter cut-off current V = -5V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - - -500 mV CE(sat) C B h V = -6V, I = -500mA DC current gain 390 - 820 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 150 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 30 - pF ob f = 1MHz hFE values are calssified as follows : rank E - - - - h 390-820 - - - - FE *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). www.rohm.com 2/6 20160107 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.