X-On Electronics has gained recognition as a prominent supplier of 2SC4132T100P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4132T100P Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4132T100P ROHM

2SC4132T100P electronic component of ROHM
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Part No.2SC4132T100P
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT DVR NPN 120V 1.5A
Datasheet: 2SC4132T100P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.781 ea
Line Total: USD 0.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.781
10 : USD 0.6853
100 : USD 0.4785
500 : USD 0.4114
1000 : USD 0.3509
2000 : USD 0.3223
5000 : USD 0.3146
10000 : USD 0.3069
25000 : USD 0.3014

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4132T100P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4132T100P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 z External dimensions (Unit : mm) z Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 2SD1857 6.8 VEBO 5 V Emitter-base voltage 2.5 IC 2 A Collector current ICP 3 A 1 * 0.5 2 * 2SC4132 0.65Max. Collector power 2 PC W dissipation 0.5 2SD1857 1 ( ) ( ) Junction temperature Tj 150 C (1) 2 3 Storage temperature 2.54 2.54 Tstg 55 to +150 C 1.05 0.45 *1 Single pulse Pw = 10ms Taping specifications *2 When mounted on a 40 40 0.7mm ceramic board. (1) Emitter (2) Collector (3) Base ROHM : ATV z Packaging specifications and hFE Type 2SC4132 2SD1857 Package MPT3 ATV hFE PQR PQR Marking CB * Code T100 TV2 Basic ordering unit (pieces) 1000 2500 Denotes hFE * z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 120 V IC = 50A Collector-emitter breakdown voltage BVCEO 120 V IC = 1mA Emitter-base breakdown voltage BVEBO 5 V IE = 50A Collector cutoff current ICBO 1 A VCB = 100V Emitter cutoff current IEBO 1 A VEB = 4V Collector-emitter saturation voltage VCE(sat) 2 V IC/IB = 1A/0.1A * DC current transfer ratio hFE 82 390 VCE/IC = 5V/0.1A Transition frequency fT 80 MHz VCE = 5V , IE = 0.1A , f = 30MHz Output capacitance Cob 20 pF VCB = 10V , IE = 0A , f = 1MHz * Measured using pulse current. * 1/1 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.0 0.9 14.5 4.4 1.6 1.5 4.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by ROHM manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE158 NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 FMMTA92QTA 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E IMZ2AT108 UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E NTE103 30A02MH-TL-E NSV40301MZ4T1G NTE101 NTE13 NTE15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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