X-On Electronics has gained recognition as a prominent supplier of 2SD1484KT146Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1484KT146Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1484KT146Q ROHM

2SD1484KT146Q electronic component of ROHM
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See Product Specifications
Part No.2SD1484KT146Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 500 mA 250MHz 200 mW Surface Mount SMT3
Datasheet: 2SD1484KT146Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2695 ea
Line Total: USD 0.27 
Availability - 4246
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SD1484KT146Q More Buying Options & Price Grid(s)

Availability Price Quantity
329
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1108
50 : USD 0.0924
150 : USD 0.083
500 : USD 0.0762
3000 : USD 0.0624
6000 : USD 0.0595

4246
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2695
10 : USD 0.1628
100 : USD 0.0792
1000 : USD 0.0693
3000 : USD 0.055
9000 : USD 0.0539
45000 : USD 0.0506

353
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 194
Multiples : 1
194 : USD 0.2097
212 : USD 0.1918

1508
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 397
Multiples : 1
397 : USD 0.2567
500 : USD 0.2475
1000 : USD 0.2395

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1484KT146Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1484KT146Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) llOutline Parameter Value SOT-323 SOT-346 V 50V CEO I 500mA C 2SD1949 2SD1484K (UMT3) (SMT3) llFeatures llInner circuit 1)High current. (I =0.5A) C 2)Low V CE(sat) V 400mV CE(sat) at I =150mA/I =15mA C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width hFE Part No. Package ordering Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SD1949 2021 T106 180 8 3000 QR Y (UMT3) SOT-346 2SD1484K 2928 T146 180 8 3000 QR Y (SMT3) www.rohm.com 1/7 20160824 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SD1949 / 2SD1484K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 500 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 30V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 150mA, I = 15mA - - 400 mV CE(sat) C B h V = 3V, I = 10mA DC current gain 120 - 390 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/7 20160824 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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