DTC144E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value VMT3 EMT3F V 50V CC I 100mA C(MAX.) R 47k 1 DTC144EM DTC144EEB R (SC-105AA) (SC-89) 47k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 47k 1 2 2) Built-in bias resistors enable the configuration of DTC144EE DTC144EUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. DTC144EUA DTC144EKA 4) Only the on/off conditions need to be set SOT-323(SC-70) SOT-346(SC-59) for operation, making the circuit design easy. 5) Complementary PNP Types: DTA144E series 6) Complex transistors: EMH2/ UMH2N/ IMH2A/ llInner circuit EMH6/ UMH6N/ IMH6A NPN type 7) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC144EM VMT3 1212 T2L 180 8 8000 26 DTC144EEB EMT3F 1616 TL 180 8 3000 26 DTC144EE EMT3 1616 TL 180 8 3000 26 DTC144EUB UMT3F 2021 TL 180 8 3000 26 DTC144EUA UMT3 2021 T106 180 8 3000 26 DTC144EKA SMT3 2928 T146 180 8 3000 26 www.rohm.com 1/10 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTC144E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) DTC144EM 150 DTC144EEB 150 DTC144EE 150 *2 Power dissipation P mW D DTC144EUB 200 DTC144EUA 200 DTC144EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3 - - I(on) O O V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I Input current V = 5V - - 0.18 mA I I I V = 50V, V = 0V Output current - - 0.5 A O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/10 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001