X-On Electronics has gained recognition as a prominent supplier of QSX8TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QSX8TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QSX8TR ROHM

Hot QSX8TR electronic component of ROHM
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See Product Specifications
Part No.QSX8TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT TRANS GP BJT NPN 30V 1A 6PIN
Datasheet: QSX8TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
511: USD 0.1925 ea
Line Total: USD 98.37 
Availability - 2473
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 511  Multiples: 1
Pack Size: 1

 QSX8TR More Buying Options & Price Grid(s)

Availability Price Quantity
2673
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.69
10 : USD 0.5313
100 : USD 0.3622
500 : USD 0.2933
1000 : USD 0.2668
3000 : USD 0.2116
9000 : USD 0.2036
24000 : USD 0.2012

2473
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 511
Multiples : 1
511 : USD 0.1925
1000 : USD 0.1862
2500 : USD 0.1807

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QSX8TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSX8TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

QSX8 Datasheet Middle Power Transistor (30V / 1A) llOutline Parameter Tr1 and Tr2 SOT-457T V 30V CEO SC-95 I 1A C TSMT6 llFeatures llInner circuit 1)A collector current is large. 2)Collector saturation voltage is low. V 350mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSX8 2928 TR 180 8 3000 X08 (TSMT6) www.rohm.com 1/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. QSX8 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 30V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 120 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E f Transition frequency - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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