X-On Electronics has gained recognition as a prominent supplier of QSX8TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QSX8TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QSX8TR ROHM

Hot QSX8TR electronic component of ROHM
QSX8TR ROHM
QSX8TR Bipolar Transistors - BJT
QSX8TR Semiconductors

Images are for reference only
See Product Specifications
Part No. QSX8TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT TRANS GP BJT NPN 30V 1A 6PIN
Datasheet: QSX8TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.93 ea
Line Total: USD 0.93 
Availability - 2147
Ship by Tue. 06 May to Thu. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 QSX8TR More Buying Options & Price Grid(s)

Availability Price Quantity
2147
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.93
10 : USD 0.5863
100 : USD 0.3531
500 : USD 0.2805
1000 : USD 0.2552
3000 : USD 0.2024
9000 : USD 0.1936
24000 : USD 0.1925
45000 : USD 0.1914

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QSX8TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSX8TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

QSX8 Datasheet Middle Power Transistor (30V / 1A) llOutline Parameter Tr1 and Tr2 SOT-457T V 30V CEO SC-95 I 1A C TSMT6 llFeatures llInner circuit 1)A collector current is large. 2)Collector saturation voltage is low. V 350mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSX8 2928 TR 180 8 3000 X08 (TSMT6) www.rohm.com 1/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. QSX8 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 30V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 120 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E f Transition frequency - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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