UMZ7NTR ROHM

General purpose transistor (dual transistors) EMZ7 / UMZ7N Features Dimensions (Unit : mm) 1) Both a 2SA2018 chip and 2SC5585 chip in EMZ7 UMZ7N a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 ( ) (3) 4 automatic mounting machines. (5) (2) 3) Transistor elements are independent, eliminating ( ) ( ) 6 1 1.2 interference. 1.6 1.25 4) Mounting cost and area can be cut in half. 2.1 5) Low VCE(sat) Each lead has same dimensions 0.1Min. Each lead has same dimensions Structure ROHM : EMT6 ROHM : UMT6 EIAJ : SC-88 NPN / PNP epitaxial planar silicon transistor Abbreviated symbol : Z7 Abbreviated symbol : Z7 Inner circuit EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr1 Tr2 Collector-base voltage VCBO 15 15 V Collector-emitter voltage VCEO 12 12 V Emitter-base voltage VEBO 6 6 V IC 500 500 mA Collector current ICP 1 1 A Collector power dissipation PC 150(TOTAL) mW 1 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. www.rohm.com 2012.06 - Rev.B 1/4 c 2012 ROHM Co., Ltd. All rights reserved. 0.22 0.13 0.5 0.5 1.0 0.5 1.6 0.2 0.15 (5) ( ) ( ) 4 6 0to0.1 (1) (3) ( ) 2 0.7 0.65 0.65 1.3 0.9 2.0 EMZ7 / UMZ7N Data Sheet Electrical characteristics (Ta=25C) Tr1 (NPN) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage VI BVCBO 15 C= 10A Collector-emitter breakdown voltage BVCEO 12 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 0.1 A VCB= 15V Emitter cutoff current IEBO 0.1 A VEB= 6V VCE(sat) Collector-emitter saturation voltage 90 250 mV IC/IB= 200mA /10mA DC current transfer ratio hFE 270 680 VCE/IC= 2V/10mA Transition frequency fT 320 MHz VCE= 2V, IC= 10mA, f= 100MHz Output capacitance Cob 7.5 pF VCB= 10V, IE= 0A, f= 1MHz Tr2 (PNP) Conditions Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 15 V IC= 10A Collector-emitter breakdown voltage BVCEO 12 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 0.1 A VCB= 15V Emitter cutoff current IEBO 0.1 A VEB= 6V Collector-emitter saturation voltage VCE(sat) 100 250 mV IC/IB= 200mA/10mA DC current transfer ratio hFE 270 680 VCE/IC= 2V/10mA Transition frequency fT 260 MHz VCE= 2V, IC= 10mA, f= 100MHz Output capacitance Cob 6.5 pF VCB= 10V, IE= 0A, f= 1MHz Packaging specifications Taping Packaging type Code TR T2R Part No. Basic ordering unit (pieces) 3000 8000 UMZ7N EMZ7 www.rohm.com 2012.06 - Rev.B 2/4 c 2012 ROHM Co., Ltd. All rights reserved.