X-On Electronics has gained recognition as a prominent supplier of BC109C Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC109C Bipolar Transistors - BJT are a product manufactured by Semiconductors. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC109C Semiconductors

BC109C electronic component of Semiconductors
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See Product Specifications
Part No.BC109C
Manufacturer: Semiconductors
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small Signal Transistor
Datasheet: BC109C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 9.3625 ea
Line Total: USD 18.73

Availability - 1
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2
Multiples : 1
2 : USD 9.3625

   
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We are delighted to provide the BC109C from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC109C and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC107,A,B BC108B,C www.centralsemi.com BC109B,C DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL BC107 BC108 BC109 UNITS A Collector-Base Voltage V 50 30 30 V CBO Collector-Emitter Voltage V 45 25 25 V CEO Emitter-Base Voltage V 6.0 5.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 600 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =45V (BC107) 15 nA CBO CB I V =45V, T =125C (BC107) 4.0 A CBO CB A I V =25V (BC108, BC109) 15 nA CBO CB I V =25V, T =125C (BC108, BC109) 4.0 A CBO CB A BV I =2.0mA (BC107) 45 V CEO C BV I =2.0mA (BC108, BC109) 25 V CEO C BV I =10A (BC107) 6.0 V EBO E BV I =10A (BC108, BC109) 5.0 V EBO E V I =10mA, I=0.5mA 0.25 V CE(SAT) C B V I =100mA, I=5.0mA 0.6 V CE(SAT) C B V I =10mA, I=0.5mA 0.7 0.83 V BE(SAT) C B V I =100mA, I=5.0mA 1.0 1.05 V BE(SAT) C B V V =5.0V, I=2.0mA 0.55 0.7 V BE(ON) CE C V V =5.0V, I=10mA 0.77 V BE(ON) CE C h V =5.0V, I =10A (BC107B, BC108B, BC109B) 40 FE CE C h V =5.0V, I =10A (BC108C, BC109C) 100 FE CE C h V =5.0V, I =2.0mA (BC107) 110 450 FE CE C h V =5.0V, I =2.0mA (BC107A) 110 220 FE CE C h V =5.0V, I =2.0mA (BC107B, BC108B, BC109B) 200 450 FE CE C h V =5.0V, I =2.0mA (BC108C, BC109C) 420 800 FE CE C R1 (16-August 2012)BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS h V =5.0V, I =2.0mA, f=1.0kHz (BC107) 125 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC107A) 125 260 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC108C) 500 fe CE C h V =5.0V, I =2.0mA, f=1.0kHz (BC109C) 450 900 fe CE C f V =5.0V, I =10mA, f=100MHz 150 MHz T CE C C V =10V, I =0, f=1.0MHz 4.5 pF ob CB E NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC107, BC108) 10 dB CE C g NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC109) 4.0 dB CE C g TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (16-August 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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