BC107,A,B
BC108B,C
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BC109B,C
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL BC107 BC108 BC109 UNITS
A
Collector-Base Voltage V 50 30 30 V
CBO
Collector-Emitter Voltage V 45 25 25 V
CEO
Emitter-Base Voltage V 6.0 5.0 5.0 V
EBO
Continuous Collector Current I 200 mA
C
Power Dissipation P 600 mW
D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
Thermal Resistance 175 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I V =45V (BC107) 15 nA
CBO CB
I V =45V, T =125C (BC107) 4.0 A
CBO CB A
I V =25V (BC108, BC109) 15 nA
CBO CB
I V =25V, T =125C (BC108, BC109) 4.0 A
CBO CB A
BV I =2.0mA (BC107) 45 V
CEO C
BV I =2.0mA (BC108, BC109) 25 V
CEO C
BV I =10A (BC107) 6.0 V
EBO E
BV I =10A (BC108, BC109) 5.0 V
EBO E
V I =10mA, I=0.5mA 0.25 V
CE(SAT) C B
V I =100mA, I=5.0mA 0.6 V
CE(SAT) C B
V I =10mA, I=0.5mA 0.7 0.83 V
BE(SAT) C B
V I =100mA, I=5.0mA 1.0 1.05 V
BE(SAT) C B
V V =5.0V, I=2.0mA 0.55 0.7 V
BE(ON) CE C
V V =5.0V, I=10mA 0.77 V
BE(ON) CE C
h V =5.0V, I =10A (BC107B, BC108B, BC109B) 40
FE CE C
h V =5.0V, I =10A (BC108C, BC109C) 100
FE CE C
h V =5.0V, I =2.0mA (BC107) 110 450
FE CE C
h V =5.0V, I =2.0mA (BC107A) 110 220
FE CE C
h V =5.0V, I =2.0mA (BC107B, BC108B, BC109B) 200 450
FE CE C
h V =5.0V, I =2.0mA (BC108C, BC109C) 420 800
FE CE C
R1 (16-August 2012)BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
h V =5.0V, I =2.0mA, f=1.0kHz (BC107) 125 500
fe CE C
h V =5.0V, I =2.0mA, f=1.0kHz (BC107A) 125 260
fe CE C
h V =5.0V, I =2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500
fe CE C
h V =5.0V, I =2.0mA, f=1.0kHz (BC108C) 500
fe CE C
h V =5.0V, I =2.0mA, f=1.0kHz (BC109C) 450 900
fe CE C
f V =5.0V, I =10mA, f=100MHz 150 MHz
T CE C
C V =10V, I =0, f=1.0MHz 4.5 pF
ob CB E
NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC107, BC108) 10 dB
CE C g
NF V =5.0V, I =0.2mA, R =2.0k, B=200Hz, f=1.0kHz (BC109) 4.0 dB
CE C g
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (16-August 2012)
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