TClamp2512N & TClamp3312N Low Capacitance TransClamp Surge Protection for Ethernet Interfaces PROTECTION PRODUCTS Description Features Transient Protec tion to TClamp2512N and TClamp3312N are specifically B ellcore 1089 (I ntra-Building) 120A (8/20s) designed to provide secondar y surge and ESD protec tion IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contac t) for Ether net and telecom inter faces. They integrate low IEC 61000-4-4 (EFT ) 4kV (5/50ns) capacitance, surge -rated steer ing diodes with a high IEC 61000-4-5 (Lightning) 120A (8/20s) power transient voltage suppressor ( T VS) to provide Small SLP pack age saves board space up to 120A (tp=8/20us) of lightning surge protec tion. Wor k ing Voltage Options: 2.5V and 3.3V Low Capacitance: 8pF M aximum (Line -to -Line) Capacitance is limited to 8pF maximum from line -to - Low D ynamic R esistance line to ensure cor rec t signal transmission on high-speed S olid-State Silicon-Avalanche Technology lines. Mechanical Characteristics TClamp2512N and TClamp3312N are in a 10-pin SLP2626P10 Pack age SLP2626P10 pack age measur ing 2.6 x 2.6 x 0.60mm. Nominal Dimensions: 2.6 x 2.6 x 0.60mm Leads are spaced at a pitch of 0.5mm and are finished Pb -Free, Halogen Free, R oHS/WEEE Compliant with lead-free N iPdAu. They may be used to meet Lead Finish: matte N iPdAu Telcordia GR-1089- CORE shor t-haul (intra-building) M olding Compound Flammabilit y R ating: UL 94V-0 surge requirements and are par ticular ly well suited for M ar k ing : M ar k ing Code + Date Code Pack aging : Tape and R eel applications where board space is at a premium such as integrated connec tors/magnetics and car r ier class Applications Ether net equipment. 10/100/1000 Ether net I ntegrated magnetics Access Equipment Central O ffice Equipment Customer Premise Equipment Nominal Dimensions (mm) Schematic and Pin Configuration 2.60 C L 12 2.60 C L 0.50 BSC 0.60 TClamp2512N & TClamp3312N Page 1 www.semtech.com Final Datasheet Rev 2.0 Semtech January 22, 2016Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 2300 W PK Peak Pulse Cur rent (tp = 8/20s) I 120 A PP (1), (3) ESD per IEC 61000-4-2 (Contac t) V 30 kV ESD O Operating Temperature T -40 to +85 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) TClamp2512N Parameter Symbol Conditions Min. Typ. Max. Units O O R everse Stand- O ff Voltage V -40 C to 85 C 2.5 V R WM I = 2A PT Punch-Through Voltage V 2.7 4.5 V PT Line 1 or Line 2 to Center Tab O T = 25 C 0.01 0.100 A R everse Leak age Cur rent I V = 2.5V R R WM O T = 85 C 0.02 0.250 A I = 100A, tp = 8/20s (2) PP Clamping Voltage V 14.5 18 V C Line 1 to Line 2 tp = 0.2/100ns ( TLP) (3), (4) D ynamic R esistance V 0.12 Ohms BO Line 1 to Line 2 V = 0V, f = 1MH z R 5 8 pF Line 1 to Line 2 Junc tion Capacitance C J V = 0V, f = 1MH z R 10 15 pF Line 1 or Line 2 to Center Tab Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using an 8/20us constant current source waveform. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP TClamp2512N & TClamp3312N Page 2 www.semtech.com Final Datasheet Rev 2.0 Semtech January 22, 2016