SiT2024B Automotive AEC-Q100 SOT23 Oscillator Features Applications AEC-Q100 with extended temperature range (-55C to 125C) Automotive, extreme temperature and other high-rel Frequencies between 1 MHz and 110 MHz accurate to electronics 6 decimal places Infotainment systems, collision detection devices, and Supply voltage of 1.8V or 2.25V to 3.63V in-vehicle networking Excellent total frequency stability as low as 20 ppm Powertrain control Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.8 mA typical at 1.8V LVCMOS/LVTTL compatible output 5-pin SOT23-5 package: 2.9 x 2.8 mm x mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Electrical Characteristics Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25C and nominal supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 110 MHz Refer to Tables 14 to 16 for a list of supported frequencies Frequency Stability and Aging Frequency Stability F stab -20 +20 ppm Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply -25 +25 ppm voltage and load (15 pF 10%). -30 +30 ppm -50 +50 ppm Operating Temperature Range Operating Temperature T use -40 +85 C AEC-Q100 Grade 3 Range (ambient) -40 +105 C AEC-Q100 Grade 2 -40 +125 C AEC-Q100 Grade 1 -55 +125 C Extended cold, AEC-Q100 Grade1 Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 1.8 1.98 V All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported. 2.25 3.63 V Current Consumption Idd 4.0 4.8 mA No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V LVCMOS Output Characteristics Duty Cycle DC 45 55 % All Vdds Rise/Fall Time Tr, Tf 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% 1.3 2.5 ns Vdd = 1.8V, 20% - 80% Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input Characteristics Input High Voltage VIH 70% Vdd Pin 1, OE Input Low Voltage VIL 30% Vdd Pin 1, OE Input Pull-up Impedance Z in 100 Pin 1, OE logic high or logic low k Startup and Resume Timing Startup Time T start 10 ms Measured from the time Vdd reaches its rated minimum value Enable/Disable Time T oe 130 ns f = 110 MHz. For other frequencies, T oe = 100 ns + 3 * cycles Standby Current I std 2.6 A Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down 1.4 A Vdd = 2.5V, ST = Low, Output is weakly pulled down 0.6 A Vdd = 1.8V, = Low, Output is weakly pulled down ST Rev 1.7 July 17, 2018 www.sitime.com YXXXX SiT2024B Automotive AEC-Q100 SOT23 Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition Jitter RMS Period Jitter T jitt 1.6 2.5 ps f = 75 MHz, 2.25V to 3.63V 1.9 3.0 ps f = 75 MHz, 1.8V RMS Phase Jitter (random) T phj 0.5 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz 1.3 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Table 2. Pin Description Top View Pin Symbol Functionality GND OUT 1 GND Power Electrical ground 1 5 2 NC No Connect No connect 1 H : specified frequency output NC 2 Output Enable L: output is high impedance. Only output driver is disabled. 3 OE/NC 1 Any voltage between 0 and Vdd or Open : Specified No Connect OE/NC 3 4 VDD frequency output. Pin 3 has no function. 2 4 VDD Power Power supply voltage 5 OUT Output Oscillator output Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 3 is not externally driven. If pin 3 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 F or higher between Vdd and GND is required. Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C Vdd -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C 3 150 C Junction Temperature Note: 3. Exceeding this temperature for extended period of time may damage the device. 4 Table 4. Thermal Consideration JA, 4 Layer Board JC, Bottom Package (C/W) (C/W) SOT23-5 421 175 Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. 5 Table 5. Maximum Operating Junction Temperature Max Operating Temperature (ambient) Maximum Operating Junction Temperature 85C 95C 105C 115C 125C 135C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev 1.7 Page 2 of 15 www.sitime.com