X-On Electronics has gained recognition as a prominent supplier of S34ML08G101TFI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML08G101TFI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML08G101TFI000 SkyHigh Memory

S34ML08G101TFI000 electronic component of SkyHigh Memory
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Part No.S34ML08G101TFI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: Flash 8G 3V 25ns NAND Flash
Datasheet: S34ML08G101TFI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.716 ea
Line Total: USD 12.72 
Availability - 1399
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1399
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 12.716
10 : USD 11.979
25 : USD 11.814
96 : USD 10.494
288 : USD 10.054
576 : USD 10.054
1056 : USD 10.01
5088 : USD 9.757

   
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We are delighted to provide the S34ML08G101TFI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML08G101TFI000 and other electronic components in the NAND Flash category and beyond.

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S34ML08G1 8 Gb, 1-bit ECC, x8 I/O, 3 V, V CC NAND Flash Memory for Embedded General Description The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 V with x8 I/O interface. This document contains information for the CC S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die. For detailed specifications, please refer to the discrete die datasheet: S34ML04G1. Distinctive Characteristics Density Security 8 Gb (4 Gb 2) One Time Programmable (OTP) area Hardware program/erase disabled during power transition Architecture (For each 4 Gb device) Input / Output Bus Width: 8-bits Additional Features Page Size: (2048 + 64) bytes 64 bytes is spare area Supports Multiplane Program and Erase commands Block Size: 64 Pages or (128k + 4k) bytes Supports Copy Back Program Plane Size Supports Multiplane Copy Back Program 2048 Blocks per Plane or (256M + 8M) bytes Supports Read Cache Device Size Electronic Signature 2 Planes per Device or 512 Mbyte Manufacturer ID: 01h NAND Flash Interface Operating Temperature Open NAND Flash Interface (ONFI) 1.0 compliant Industrial: 40 C to 85 C Address, Data and Commands multiplexed Automotive: 40 C to 105 C Supply Voltage 3.3 V device: Vcc = 2.7 V ~ 3.6 V Performance Page Read / Program Reliability Random access: 25 s (Max) 100,000 Program / Erase cycles (Typ) (with 1 bit / 512 + 16 byte ECC) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase / Multiplane Erase (S34ML04G1) 1000 program-erase cycles with ECC Block Erase time: 3.5 ms (Typ) Package Options Lead Free and Low Halogen 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00483 Rev. *I Revised April 25, 2016S34ML08G1 Contents General Description ............................................................. 1 Distinctive Characteristics .................................................. 1 Performance.......................................................................... 1 1. Connection Diagram.................................................... 3 2. Pin Description............................................................. 5 3. Block Diagrams............................................................ 6 4. Addressing ................................................................... 8 5. Read Status Enhanced ................................................ 8 6. Extended Read Status ................................................. 8 7. Read ID.......................................................................... 9 7.1 Read Parameter Page ................................................. 10 8. Electrical Characteristics.......................................... 12 8.1 Valid Blocks ................................................................. 12 8.2 Recommended Operating Conditions.......................... 12 8.3 DC Characteristics....................................................... 13 8.4 Pin Capacitance........................................................... 13 8.5 Power Consumptions and Pin Capacitance for Allowed Stacking Configurations............................................... 13 9. Physical Interface ...................................................... 14 9.1 Physical Diagram......................................................... 14 10. Ordering Information................................................. 16 11. Appendix A Errata ................................................. 17 12. Revision History......................................................... 18 Document Number: 002-00483 Rev. *I Page 2 of 20

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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