X-On Electronics has gained recognition as a prominent supplier of 2N5884 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5884 Bipolar Transistors - BJT are a product manufactured by SPC Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5884 SPC Technology

2N5884 electronic component of SPC Technology
2N5884 SPC Technology
2N5884 Bipolar Transistors - BJT
2N5884  Semiconductors

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See Product Specifications
Part No. 2N5884
Manufacturer: SPC Technology
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Power SW
Datasheet: 2N5884 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 6.1351 ea
Line Total: USD 613.51 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 100
Multiples : 1
100 : USD 6.1351
250 : USD 5.2536
500 : USD 5.1621
1000 : USD 4.5293
2500 : USD 3.8888
5000 : USD 3.7286

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the 2N5884 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5884 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5883 2N5884 PNP 2N5885 2N5886 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N5883 2N5884 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5885 2N5886 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 25 A C Peak Collector Current I 50 A CM CContinuous Base Current I 7.5 A B Power Dissipation P 200 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.875 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 1.0 mA CBO CB CBO I V =Rated V 2.0 mA CEO CE CEO I V =Rated V , V=1.5V 1.0 mA CEX CE CEO BE I V =Rated V , V =1.5V, T=150C 10 mA CEX CE CEO BE C I V=5.0V 1.0 mA EBO EB BV I =200mA (2N5883, 2N5885) 60 V CEO C BV I =200mA (2N5884, 2N5886) 80 V CEO C V I =15A, I=1.5A 1.0 V CE(SAT) C B V I =25A, I=6.25A 4.0 V CE(SAT) C B V I =25A, I=6.25A 2.5 V BE(SAT) C B V V =4.0V, I=10A 1.5 V BE(ON) CE C h V =4.0V, I=3.0A 35 FE CE C h V =4.0V, I=10A 20 100 FE CE C h V =4.0V, I=25A 4.0 FE CE C f V =10V, I =1.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=1.0MHz (2N5883, 2N5885) 1000 pF ob CB E C V =10V, I =0, f=1.0MHz (2N5884, 2N5886) 500 pF ob CB E h V =4.0V, I =3.0A, f=1.0kHz 20 fe CE C t V =30V, I =10A, I =I=1.0A 0.7 s r CC C B1 B2 t V =30V, I =10A, I =I=1.0A 1.0 s s CC C B1 B2 t V =30V, I =10A, I =I=1.0A 0.8 s f CC C B1 B2 R1 (4-December 2012)2N5883 2N5884 PNP 2N5885 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (4-December 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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