2N5883 2N5884 PNP 2N5885 2N5886 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N5883 2N5884 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5885 2N5886 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 25 A C Peak Collector Current I 50 A CM CContinuous Base Current I 7.5 A B Power Dissipation P 200 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.875 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 1.0 mA CBO CB CBO I V =Rated V 2.0 mA CEO CE CEO I V =Rated V , V=1.5V 1.0 mA CEX CE CEO BE I V =Rated V , V =1.5V, T=150C 10 mA CEX CE CEO BE C I V=5.0V 1.0 mA EBO EB BV I =200mA (2N5883, 2N5885) 60 V CEO C BV I =200mA (2N5884, 2N5886) 80 V CEO C V I =15A, I=1.5A 1.0 V CE(SAT) C B V I =25A, I=6.25A 4.0 V CE(SAT) C B V I =25A, I=6.25A 2.5 V BE(SAT) C B V V =4.0V, I=10A 1.5 V BE(ON) CE C h V =4.0V, I=3.0A 35 FE CE C h V =4.0V, I=10A 20 100 FE CE C h V =4.0V, I=25A 4.0 FE CE C f V =10V, I =1.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=1.0MHz (2N5883, 2N5885) 1000 pF ob CB E C V =10V, I =0, f=1.0MHz (2N5884, 2N5886) 500 pF ob CB E h V =4.0V, I =3.0A, f=1.0kHz 20 fe CE C t V =30V, I =10A, I =I=1.0A 0.7 s r CC C B1 B2 t V =30V, I =10A, I =I=1.0A 1.0 s s CC C B1 B2 t V =30V, I =10A, I =I=1.0A 0.8 s f CC C B1 B2 R1 (4-December 2012)2N5883 2N5884 PNP 2N5885 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (4-December 2012) www.centralsemi.com