X-On Electronics has gained recognition as a prominent supplier of 2N6547 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6547 Bipolar Transistors - BJT are a product manufactured by SPC Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6547 SPC Technology

2N6547 electronic component of SPC Technology
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Part No.2N6547
Manufacturer: SPC Technology
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 850Vcev 450Vcex 400Vceo 175W Trans
Datasheet: 2N6547 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.7307 ea
Line Total: USD 14.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 14.7307
10 : USD 9.4758
100 : USD 7.4497
250 : USD 5.8354
500 : USD 4.5517
1000 : USD 4.0871

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Fall Time @ Ic
Full Power Rating Temperature
Gain Bandwidth Ft Min
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Termination Type
Voltage Vces
LoadingGif
 
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We are delighted to provide the 2N6547 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6547 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N6546 2N6547 www.centralsemi.com NPN SILICON DESCRIPTION: POWER TRANSISTOR The CENTRAL SEMICONDUCTOR 2N6546, 2N6547 types are NPN Silicon Power Transistors designed for high voltage, high current, applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N6546 2N6547 UNITS Collector-Emitter Voltage V 650 850 V CEV Collector-Emitter Voltage V 350 450 V CEX Collector-Emitter Voltage V 300 400 V CEO Emitter-Base Voltage V 9.0 V EBO Continuous Collector Current I 15 A C Peak Collector Current I 30 A CM Continuous Emitter Current I 25 A E Peak Emitter Current I 50 A EM Continuous Base Current I 10 A B Peak Base Current I 20 A BM Power Dissipation P 175 W D Power Dissipation, T=100C P 100 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N6546 2N6547 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V , V=1.5V - 1.0 - 1.0 mA CEV CE CEV BE I V =Rated V , V =1.5V, T=100C - 4.0 - 4.0 mA CEV CE CEV BE C I V =Rated V , R =50, T=100C - 5.0 - 5.0 mA CER CE CEV BE C I V=9.0V - 1.0 - 1.0 mA EBO EB BV V =Rated V , I =8.0A, T=100C 350 - 450 - V CEX CL CEX C C BV V =Rated V -100V, I =15A, T=100C 200 - 300 - V CEX CL CEO C C BV I=100mA 300 - 400 - V CEO C V I =10A, I=2.0A - 1.5 - 1.5 V CE(SAT) C B V I =10A, I =2.0A, T=100C - 2.5 - 2.5 V CE(SAT) C B C V I =15A, I=3.0A - 5.0 - 5.0 V CE(SAT) C B V I =10A, I=2.0A - 1.6 - 1.6 V BE(SAT) C B V I =10A, I =2.0A, T=100C - 1.6 - 1.6 V BE(SAT) C B C h V =2.0V, I=5.0A 12 60 12 60 FE CE C h V =2.0V, I=10A 6.0 30 6.0 30 FE CE C R2 (12-December 2011)2N6546 2N6547 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS f V =10V, I =500mA, f=1.0MHz 6.0 28 MHz t CE C C V =10V, I =0, f=1.0MHz 125 500 pF ob CB E I V =100V, t=1.0s 0.2 A s/b CE Resistive Load t 0.05 s d V =250V, I =10A, CC C t 1.0 s r I =I =2.0A, t =100s, B1 B2 p t 4.0 s s Duty Cycle2.0% t 0.7 s f Inductive Load (Clamped) t 5.0 s V =Rated V , I =10A, s CL CEX C t 1.5 s I =2.0A, V =5.0V, T =100C f B1 BE C t V =Rated V , I =10A, 2.0 s s CL CEX C t I =2.0A, V =5.0V, T =25C 0.9 s f B1 BE C TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (12-December 2011) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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