2N2219A STMicroelectronics

2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 0.6 A C I Collector Peak Current (t < 5 ms) 0.8 A CM p o P Total Dissipation at T 25 C tot amb 0.8 W for 2N2219A for 2N2222A 0.5 W o at TC 25 C 3 W for 2N2219A 1.8 W for 2N2222A o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/7 February 2003 Obsolete Product(s) - Obsolete Product(s)2N2219A / 2N2222A THERMAL DATA TO-39 TO-18 o R Thermal Resistance Junction-Case Max 50 83.3 C/W thj-case o R Thermal Resistance Junction-Ambient Max 187.5 300 C/W thj-amb o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 60 V 10 nA CBO CB o Current (I = 0) V = 60 V T = 150 C 10 A E CB j I Collector Cut-off V = 60 V 10 nA CEX CE Current (V = -3V) BE I Base Cut-off Current V = 60 V 20 nA BEX CE (V = -3V) BE I Emitter Cut-off Current V = 3 V 10 nA EBO EB (I = 0) C V Collector-Base 75 V (BR)CBO I = 10 A C Breakdown Voltage (I = 0) E V * Collector-Emitter I = 10 mA 40 V (BR)CEO C Breakdown Voltage (I = 0) B V Emitter-Base 6V (BR)EBO I = 10 A E Breakdown Voltage (I = 0) C V * Collector-Emitter I = 150 mA I = 15 mA 0.3 V CE(sat) C B Saturation Voltage I = 500 mA I = 50 mA 1 V C B V * Base-Emitter I = 150 mA I = 15 mA 0.6 1.2 V BE(sat) C B Saturation Voltage I = 500 mA I = 50 mA 2 V C B h * DC Current Gain I = 0.1 mA V = 10 V 35 FE C CE I = 1 mA V = 10 V 50 C CE I = 10 mA V = 10 V 75 C CE I = 150 mA V = 10 V 100 300 C CE I = 500 mA V = 10 V 40 C CE I = 150 mA V = 1 V 50 C CE I = 10 mA V = 10 V C CE o T = -55 C 35 amb h * Small Signal Current I = 1 mA V = 10 V f = 1KHz 50 300 fe C CE Gain I = 10 mA V = 10 V f = 1KHz 75 375 C CE f Transition Frequency I = 20 mA V = 20 V 300 MHz T C CE f = 100 MHz C Emitter-Base I = 0 V = 0.5 V f = 100KHz 25 pF EBO C EB Capacitance C Collector-Base I = 0 V = 10 V f = 100 KHz 8 pF CBO E CB Capacitance Re(hie) Real Part of Input IC = 20 mA VCE = 20 V 60 Impedance f = 300MHz * Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/7 Obsolete Product(s) - Obsolete Product(s)