2N3055 STMicroelectronics

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors aredesigned for generalpurpose switching and amplifier applications. Features 2N3055(NPN), MJ2955(PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 1.52 R C/W JC ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS* CollectorEmitter Sustaining Voltage (Note 1) (I = 200 mAdc, I = 0) V 60 Vdc C B CEO(sus) CollectorEmitter Sustaining Voltage (Note 1) (I = 200 mAdc, R = 100 ) V 70 Vdc C BE CER(sus) Collector Cutoff Current (V = 30 Vdc, I = 0) I 0.7 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 100 Vdc, V = 1.5 Vdc) 1.0 CE BE(off) (V = 100 Vdc, V = 1.5 Vdc, T = 150C) 5.0 CE BE(off) C Emitter Cutoff Current (V = 7.0 Vdc, I = 0) I 5.0 mAdc BE C EBO ON CHARACTERISTICS* (Note 1) DC Current Gain h FE (I = 4.0 Adc, V = 4.0 Vdc) C CE 20 70 (I = 10 Adc, V = 4.0 Vdc) C CE 5.0 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 400 mAdc) C B 1.1 (I = 10 Adc, I = 3.3 Adc) C B 3.0 BaseEmitter On Voltage (I = 4.0 Adc, V = 4.0 Vdc) V 1.5 Vdc C CE BE(on) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I 2.87 Adc s/b (V = 40 Vdc, t = 1.0 s, Nonrepetitive) CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.5 MHz C CE T *SmallSignal Current Gain (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 15 120 C CE fe *SmallSignal Current Gain Cutoff Frequency (V = 4.0 Vdc, I = 1.0 Adc, f = 1.0 kHz) f 10 kHz CE C hfe *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 20 There are two limitations on the power handling ability of 50 s a transistor: average junction temperature and second 10 dc 1 ms breakdown. Safe operating area curves indicate I V C CE limits of the transistor that must be observed for reliable 6 operation i.e., the transistor must not be subjected to greater 4 dissipation than the curves indicate. 500 s 2 250 s The data of Figure 2 is based on T = 25C T is C J(pk) variable depending on power level. Second breakdown 1 pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. 0.6 BONDING WIRE LIMIT 0.4 THERMALLY LIMITED T = 25C (SINGLE PULSE) C SECOND BREAKDOWN LIMIT 0.2 6 10 20 40 60 V , COLLECTOREMITTER VOLTAGE (VOLTS) CE Figure 2. Active Region Safe Operating Area