ON Semiconductor 2N5191 Silicon NPN Power Transistors * 2N5192 . for use in power amplifier and switching circuits, excellent *ON Semiconductor Preferred Device safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE POWER TRANSISTORS SILICON NPN 6080 VOLTS *MAXIMUM RATINGS 40 WATTS Rating Symbol 2N5191 2N5192 Unit CollectorEmitter Voltage V 60 80 Vdc CEO CollectorBase Voltage V 60 80 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current I 4.0 Adc C Base Current I 1.0 Adc B Total Power Dissipation T = 25 C P 40 Watts C D Derate above 25 C 320 mW/ C Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range THERMAL CHARACTERISTICS CASE 7709 Characteristic Symbol Max Unit TO225AA TYPE Thermal Resistance, Junction to Case 3.12 C JC *ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (1) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) 2N5191 C B 60 2N5192 80 Collector Cutoff Current I mAdc CEO (V = 60 Vdc, I = 0) 2N5191 CE B 1.0 (V = 80 Vdc, I = 0) 2N5192 CE B 1.0 Collector Cutoff Current I mAdc CEX (V = 60 Vdc, V = 1.5 Vdc) 2N5191 CE EB(off) 0.1 (V = 80 Vdc, V = 1.5 Vdc) 2N5192 CE EB(off) 0.1 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) 2N5191 CE EB(off) C 2.0 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) 2N5192 CE EB(off) C 2.0 Collector Cutoff Current I mAdc CBO (V = 60 Vdc, I = 0) 2N5191 CB E 0.1 (V = 80 Vdc, I = 0) 2N5192 CB E 0.1 Emitter Cutoff Current I 1.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2001 Rev. 9 2N5191/D