2N5192 STMicroelectronics

2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits excellent safe area limits. Complement to PNP 2N5190G, 2N5191G, 2N5192G ELECTRICAL CHARACTERISTICS* (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) C B 2N5190G 40 2N5191G 60 2N5192G 80 Collector Cutoff Current I mAdc CEO (V = 40 Vdc, I = 0) CE B 2N5190G 1.0 (V = 60 Vdc, I = 0) CE B 2N5191G 1.0 (V = 80 Vdc, I = 0) CE B 2N5192G 1.0 Collector Cutoff Current I mAdc CEX (V = 40 Vdc, V = 1.5 Vdc) CE EB(off) 2N5190G 0.1 (V = 60 Vdc, V = 1.5 Vdc) CE EB(off) 2N5191G 0.1 (V = 80 Vdc, V = 1.5 Vdc) CE EB(off) 2N5192G 0.1 (V = 40 Vdc, V = 1.5 Vdc, T = 125 C) CE EB(off) C 2N5190G 2.0 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE EB(off) C 2.0 2N5191G (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE EB(off) C 2N5192G 2.0 Collector Cutoff Current I mAdc CBO (V = 40 Vdc, I = 0) CB E 2N5190G 0.1 (V = 60 Vdc, I = 0) CB E 2N5191G 0.1 (V = 80 Vdc, I = 0) CB E 2N5192G 0.1 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.5 Adc, V = 2.0 Vdc) C CE 2N5190G/2N5191G 25 100 2N5192G 20 80 (I = 4.0 Adc, V = 2.0 Vdc) C CE 2N5190G/2N5191G 10 2N5192G 7.0 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.5 Adc, I = 0.15 Adc) 0.6 C B (I = 4.0 Adc, I = 1.0 Adc) 1.4 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.5 Adc, V = 2.0 Vdc) 1.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) 2.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *JEDEC Registered Data. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.