2STA1695 STMicroelectronics

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V = -140 V CEO Complementary to 2STC4468 Typical f = 20 MHz t Fully characterized at 125 C 3 2 Applications 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram This device is an PNP transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages. Table 1. Device summary Order code Marking Package Packaging 2STA1695 2STA1695 TO-3P Tube February 2012 Doc ID 13599 Rev 3 1/10 www.st.com 10Electrical ratings 2STA1695 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) -140 V CBO E V Collector-emitter voltage (I = 0) -140 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -10 A C I Collector peak current (t < 5 ms) -20 A CM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.25 C/W thj-case R Thermal resistance junction-ambient max 35.7 C/W thj-amb 2/10 Doc ID 13599 Rev 3