2STA2510 STMicroelectronics

2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V = -100 V CEO Complementary to 2STC2510 Typical f = 20 MHz t o Fully characterized at 125 C 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2510 2STA2510 TO-3P Tube November 2008 Rev 3 1/8 www.st.com A8 Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2STA2510 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) -100 V CBO E V Collector-emitter voltage (I = 0) -100 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -25 A C I Collector peak current (t < 5 ms) -50 A CM P P Total dissipation at T = 25 C 125 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1 C/W thj-case 2/8 Obsolete Product(s) - Obsolete Product(s)