2STF2550 STMicroelectronics

2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 4 Surface mounting devices in medium power 3 3 2 SOT-89 and SOT-223 packages 2 1 1 Applications SOT-223 SOT-89 Emergency lighting LED Motherboard and hard disk drive Mobile equipment Figure 1. Internal schematic diagram Battery charger Voltage regulation Description The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2STF2550 2550 SOT-89 Tape and reel 2STN2550 N2550 SOT-223 November 2008 Rev 1 1/8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8 change without notice.Electrical ratings 2STF2550 - 2STN2550 1 Electrical ratings Table 2. Absolute maximum rating Value Symbol Parameter 2STF2550 2STN2550 Unit SOT-89 SOT-223 V Collector-emitter voltage (V = 0) -50 V CES CE V Collector-emitter voltage (I = 0) -50 V CEO B V Emitter-base voltage (I = 0) -5 V EBO C I Collector current -5 A C I Collector peak current (t < 5 ms) -10 A CM P I Base current -1 A B P Total dissipation at T = 25 C 1.4 1.6 W TOT amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter SOT-89 SOT-223 Unit (1) R Thermal resistance junction-amb max 89 78 C/W thj-amb 2 1. Device mounted on PCB area of 1 cm 2/8