2STN1360 STMicroelectronics

2STD1360, 2STF1360, 2STN1360 Low voltage fast-switching NPN power transistors Datasheet production data Features 4 Very low collector-emitter saturation voltage 4 3 High current gain characteristic 3 2 2 1 Fast-switching speed 1 SOT-223 SOT-89 Applications TAB Emergency lighting LED 3 Voltage regulation 1 Relay drive TO-252 (DPAK) Description Figure 1. Internal schematic diagram This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. The complementary PNP types are the 2STD2360T4, the 2STF2360 and the 2STN2360. Table 1. Device summary Order codes Marking Packages Packaging 2STD1360T4 2STD1360 DPAK Tape and reel 2STF1360 1360 SOT-89 Tape and reel 2STN1360 N1360 SOT-223 Tape and reel August 2012 Doc ID 11783 Rev 3 1/16 This is information on a product in full production. www.st.com 16Absolute maximum ratings 2STD1360, 2STF1360, 2STN1360 1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter 2STD1360 2STF1360 2STN1360 Unit DPAK SOT-89 SOT-223 V Collector-base voltage (I = 0) 80 V CBO E V Collector-emitter voltage (I = 0) 60 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 3 A C I Collector peak current (t < 5 ms) 5 A CM P I Base current 0.2 A B I Base peak current (t < 5 ms) 0.4 A BM P P Total dissipation at T = 25 C 15 1.4 1.6 W TOT amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter DPAK SOT-89 SOT-223 Unit (1) R Thermal resistance junction-ambient Max 8.3 89 78 C/W thJA 2 1. Device mounted on a PCB area of 1 cm 2/16 Doc ID 11783 Rev 3