2STW1693 STMicroelectronics

2STW1693 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V = -80 V CEO Complementary to 2STW4466 Typical f = 20 MHz t o Fully characterized at 125 C Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low V behaviour. CE(sat) Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STW1693 2STW1693 TO-247 Tube October 2008 Rev 2 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2STW1693 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) -100 V CBO E V Collector-emitter voltage (I = 0) -80 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -6 A C I Collector peak current (t < 5 ms) -12 A CM P P Total dissipation at T = 25 C 60 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.08 C/W thj-case 2/9 Obsolete Product(s) - Obsolete Product(s)