X-On Electronics has gained recognition as a prominent supplier of 2STW4466 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2STW4466 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2STW4466 STMicroelectronics

2STW4466 electronic component of STMicroelectronics
2STW4466 STMicroelectronics
2STW4466 Bipolar Transistors - BJT
2STW4466  Semiconductors

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See Product Specifications
Part No. 2STW4466
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Datasheet: 2STW4466 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9289 ea
Line Total: USD 0.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 0.9289
10 : USD 0.912
100 : USD 0.7874
250 : USD 0.6911
1000 : USD 0.5948
1500 : USD 0.5891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2STW4466 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2STW4466 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2STW4466 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 80 V CEO Complementary to 2STW1693 Typical f = 20 MHz t o Fully characterized at 125 C Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a NPN transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low V behaviour. CE(sat) Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STW4466 2STW4466 TO-247 Tube September 2008 Rev 2 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2STW4466 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 6V EBO C I Collector current 6 A C I Collector peak current (t < 5 ms) 12 A CM P P Total dissipation at T = 25 C 60 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.08 C/W thj-case 2/9 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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