X-On Electronics has gained recognition as a prominent supplier of 2STW4468 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2STW4468 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2STW4468 STMicroelectronics

Name: 2STW4468
Brand: STMicroelectronics
SKU: 2STW4468_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

2STW4468 electronic component of STMicroelectronics

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See Product Specifications

Part No.	2STW4468
Manufacturer:	STMicroelectronics
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT High PWR NPN Trans 140V VCEO 20 MHz
Datasheet:	2STW4468 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4841 ea
Line Total: USD 1.48

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2STW4468 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 01 May to Wed. 07 May MOQ : 1200 Multiples : 1200	1200 : USD 1.3843

0 Ship by Thu. 01 May to Wed. 07 May MOQ : 1 Multiples : 1	1 : USD 2.6764 10 : USD 1.8715 100 : USD 1.5384 500 : USD 1.2429 1000 : USD 1.0599 5000 : USD 0.9913

0 Ship by Thu. 01 May to Wed. 07 May MOQ : 1 Multiples : 1	1 : USD 1.4841 10 : USD 1.4388 50 : USD 1.3028 250 : USD 1.0366 500 : USD 0.963 1000 : USD 0.9403

Specifications

Manufacturer STMicroelectronics STMicroelectronics
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Package / Case TO - 247 TO - 247
Transistor Polarity NPN NPN
Packaging Tube Tube
Brand Stmicroelectronics Stmicroelectronics
Collector Emitter Voltage Vbrceo 140 V 140 V
Transition Frequency Ft 20 MHz 20 MHz
Power Dissipation Pd 100 W 100 W
Dc Collector Current 7 A 7 A
Dc Current Gain Hfe 70hFE 70hFE
Transistor Case Style TO - 247 TO - 247
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Svhc No SVHC (17 - Dec - 2015) No SVHC (17 - Dec - 2015)
Collector Emitter Saturation Voltage Vceon 500 mV 500 mV
Continuous Collector Current Ic Max 10 A 10 A
Current Ic Continuous A Max 7 A 7 A
Current Ic Hfe 3 A 3 A
Gain Bandwidth Ft Typ 20Mhz 20Mhz
Hfe Min 70 70
Power Dissipation Ptot Max 100 W 100 W
Termination Type Through Hole Through Hole
Voltage Vcbo 200 V 200 V

We are delighted to provide the 2STW4468 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2STW4468 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2STW4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 140 V CEO Complementary to 2STW1695 Fast-switching speed Typical f = 20 MHz t o Fully characterized at 125 C 3 2 1 Applications TO-247 Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STW4468 2STW4468 TO-247 Tube October 2008 Rev 4 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2STW4468 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) 200 V CBO E V Collector-emitter voltage (I = 0) 140 V CEO B V Emitter-base voltage (I = 0) 6V EBO C I Collector current 10 A C I Collector peak current (t < 5 ms) 20 A CM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.25 C/W thj-case 2/9 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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