A1C15S12M3 Datasheet ACEPACK 1 converter inverter brake, 1200 V, 15 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 1 power module DBC Cu Al O Cu 2 3 Converter inverter brake topology 1600 V, very low drop rectifiers for converter 1200 V, 15 A IGBTs and diodes Soft and fast recovery diode ACEPACK 1 Integrated NTC Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1C15S12M3 Product summary Order code A1C15S12M3 Marking A1C15S12M3 Package ACEPACK 1 Leads type Solder contact pins DS11631 - Rev 7 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.A1C15S12M3 Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at T = 25 C, unless otherwise specified. J 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current at T = 100 C 15 A C C (1) I Pulsed collector current (t = 1 ms) 30 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 142.8 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit V Collector-emitter breakdown voltage I = 1 mA, V = 0 V 1200 V (BR)CES C GE V = 15 V, I = 15 A 1.95 2.45 V GE C V CE(sat) Collector-emitter saturation voltage (terminal) V = 15 V, I = 15 A, T = 150 C 2.3 V GE C J V Gate threshold voltage V = V , I = 1 mA 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 1200 V 100 A CES GE CE I Gate-emitter leakage current V = 0 V, V = 20 V 500 nA GES CE GE C Input capacitance 985 pF ies C Output capacitance V = 25 V, f = 1 MHz, V = 0 V 118 pF oes CE GE C Reverse transfer capacitance 40 pF res Q Total gate charge V = 960 V, I = 15 A, V = 15 V 71 nC g CC C GE t Turn-on delay time 120 ns d(on) V = 600 V, I = 15 A, R = 22 , CC C G t Current rise time 14.5 ns r V = 15 V,di/dt = 820 A/s GE (1) E Turn-on switching energy 0.59 mJ on t Turn-off delay time 115 ns d(off) V = 600 V, I = 15 A, R = 22 , CC C G t Current fall time 84 ns f V = 15 V,dv/dt = 8200 V/s GE (2) E Turn-off switching energy 0.83 mJ off DS11631 - Rev 7 page 2/19