FD300R17KE4P 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1700V CES I = 300A / I = 600A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-04-02FD300R17KE4P Vorlufige Daten Preliminary Data IGBT, Brems-Chopper / IGBT, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 80C, Tvj max = 175C ICDC 300 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 300 A Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,35 V GE vj CE sat Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V Q 3,05 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 2,5 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 24,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,81 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 300 A, VCE = 900 V Tvj = 25C 0,24 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,28 s GE vj R = 2,4 T = 150C 0,30 s Gon vj Anstiegszeit, induktive Last IC = 300 A, VCE = 900 V Tvj = 25C 0,05 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,055 s GE vj R = 2,4 T = 150C 0,055 s Gon vj Abschaltverzgerungszeit, induktive Last I = 300 A, V = 900 V T = 25C 0,70 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,74 s GE vj R = 2,4 T = 150C 0,78 s Goff vj Fallzeit, induktive Last I = 300 A, V = 900 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,13 s GE vj R = 2,4 T = 150C 0,15 s Goff vj Einschaltverlustenergie pro Puls I = 300 A, V = 900 V, L = 60 nH T = 25C 63,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 4800 A/s (T = 150C) T = 125C E 86,0 mJ vj vj on V = -15 / 15 V, R = 2,4 T = 150C 93,0 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 300 A, V = 900 V, L = 60 nH T = 25C 55,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 3600 V/s (T = 150C) T = 125C E 90,0 mJ vj vj off V = -15 / 15 V, R = 2,4 T = 150C 100 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,114 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 2.0 2019-04-02